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Company Information:

Company Name:
SJT MICROPOWER INC
Address:
16411 N SKYRIDGE LN
FOUNTAIN HILLS, AZ 85268-
Phone:
N/A
URL:
N/A
EIN:
861028814
DUNS:
185307266
Number of Employees:
2
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $469,295.00 5
SBIR Phase II $1,346,551.00 2
STTR Phase I $98,975.00 1
STTR Phase II $730,629.00 1

Award List:

SOI MESFETs for Extreme Environment Electronics

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$69,609.00
Agency:
NASA
Principal Investigator:
Joseph Ervin, Principal Investigator
Abstract:
We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs). Our technology allows MESFETs to be fabricated using commercial SOI CMOS foundries with no expensive changes to the process flow. The… More

SOI MESFETs for Ultra-Low Power Electronic Circuits

Award Year / Program / Phase:
2007 / STTR / Phase I
Award Amount:
$98,975.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Joseph Ervin, CHIEF TECHNICAL OFFICER
Research Institution:
ARIZONA STATE UNIV.
RI Contact:
Dudley Sharp
Abstract:
Simulations of high performance silicon-on-insulator (SOI) MESFETs show that they can be used for ultra-low power (ULP) radio frequency electronics with power added efficiencies (PAE) that are 10 times higher than existing solutions. The high PAE comes from the enhanced voltage swing that the… More

Ultra-Low Power Transceiver for the Medical Implant Communications Service

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$99,999.00
Agency:
HHS
Principal Investigator:
Abstract:
DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a transmitter implanted inside the human body. Currently, it is difficult to communicate with d evices implanted within the human body and… More

Wide Temperature Range DC-DC Boost Converters for Command/Control/Drive Electronics

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,740.00
Agency:
NASA
Principal Investigator:
Joseph Ervin, Principal Investigator
Abstract:
We shall develop wide temperature range DC-DC boost converters that can be fabricated using commercial CMOS foundries. The boost converters will increase the low voltage supply (~ 0.7 to 3V) of an advanced CMOS integrated circuit to the higher values (3-10V) required for integrated… More

Ultra-Low Power Transceiver for the Medical Implant Communications Service

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$749,219.00
Agency:
HHS
Principal Investigator:
Abstract:
DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a complete transceiver implanted inside the human body. Currently, it is difficult to communic ate with devices implanted within the human… More

SOI MESFETs for Ultra-Low Power Electronic Circuits

Award Year / Program / Phase:
2010 / STTR / Phase II
Award Amount:
$730,629.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Seth Wilk, Chief Technology Officer – (602) 703-3730
Research Institution:
Arizona State University
RI Contact:
Dudley Sharp
Abstract:
Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity will develop MESFET based circuitries that allow high voltage applications to coexist on future,… More

Unconditionally Stable Low Dropout Regulators for Extreme Environments

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$99,949.00
Agency:
NASA
Principal Investigator:
Seth Wilk, Principal Investigator
Abstract:
We have developed a fully integrated LDO regulator using a patented transistor technology that can be manufactured in high volume commercial semiconductor foundries with no changes to the process flow. The regulator is stable under all load conditions without the need for an external compensation… More

Unconditionally Stable Low Dropout Regulators for Extreme Environments

Award Year / Program / Phase:
2011 / SBIR / Phase II
Award Amount:
$597,332.00
Agency:
NASA
Principal Investigator:
Seth Wilk, Principal Investigator
Abstract:
We have developed a low dropout (LDO) regulator using a patented MESFET transistor technology that can be manufactured in commercial CMOS foundries with no changes to the process flow. The regulator is stable under all load conditions without an external compensation capacitor, thereby reducing the… More

CMOS Compatible SOI MESFETs for Radiation Hardened DC-to-DC Converters

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,998.00
Agency:
NASA
Principal Investigator:
William Lepkowski, Principal Investigator
Abstract:
We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is fully CMOS-compatible and can be integrated alongside conventional MOSFETs with no changes to the process flow. Unlike the MOSFETs however,… More