We are proposing a new extreme environment electronics (EEE) technology based on silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs). Our technology allows MESFETs to be fabricated using commercial SOI CMOS foundries with no expensive changes to the process flow. The… More

Simulations of high performance silicon-on-insulator (SOI) MESFETs show that they can be used for ultra-low power (ULP) radio frequency electronics with power added efficiencies (PAE) that are 10 times higher than existing solutions. The high PAE comes from the enhanced voltage swing that the… More

DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a transmitter implanted inside the human body. Currently, it is difficult to communicate with d evices implanted within the human body and… More

We shall develop wide temperature range DC-DC boost converters that can be fabricated using commercial CMOS foundries. The boost converters will increase the low voltage supply (~ 0.7 to 3V) of an advanced CMOS integrated circuit to the higher values (3-10V) required for integrated… More

DESCRIPTION (provided by applicant): This proposal describes the research required to design, simulate and manufacture ultra-low power circuitries to be used in a complete transceiver implanted inside the human body. Currently, it is difficult to communic ate with devices implanted within the human… More

Voltage compliant metal-semiconductor field-effect-transistors (MESFETs) provide solutions to critical problems arising from the reduced operating voltage of highly scaled CMOS. This Phase 2 activity will develop MESFET based circuitries that allow high voltage applications to coexist on future,… More

We have developed a fully integrated LDO regulator using a patented transistor technology that can be manufactured in high volume commercial semiconductor foundries with no changes to the process flow. The regulator is stable under all load conditions without the need for an external compensation… More

We have developed a low dropout (LDO) regulator using a patented MESFET transistor technology that can be manufactured in commercial CMOS foundries with no changes to the process flow. The regulator is stable under all load conditions without an external compensation capacitor, thereby reducing the… More

We have developed a novel metal-semiconductor field-effect-transistor (MESFET) technology suitable for extreme environment electronics. The MESFET technology is fully CMOS-compatible and can be integrated alongside conventional MOSFETs with no changes to the process flow. Unlike the MOSFETs however,… More