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Radiation Hard Lead Zirconium Titanium (PZT) for Ferroelectric and…

Award Information

Agency:
Department of Energy
Branch:
N/A
Award ID:
57046
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
70224S02-I
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Structured Materials Industries
201 Circle Drive North Unit # 102 Piscataway, NJ -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2002
Title: Radiation Hard Lead Zirconium Titanium (PZT) for Ferroelectric and Plezoelectric Devices
Agency: DOE
Contract: DE-FG02-02ER83525
Award Amount: $99,920.00
 

Abstract:

70224 Ferroelectric properties of the thin film Pb(Zr x Ti 1-x) 03 (PZT) can be employed in radiation hard nonvolatile memory (NVRAM) and micro-electrical mechanical sensors (MEMS) to enhance component endurance and lifetime. The ability of PZT to resist radiation effects is dependent on its unique composition and film texture. Although Argonne National Laboratory (ANL) has developed radiation resistant PZT compositions, the technology has not yet been used to mitigate radiation effects in device components. This project will demonstrate the ferroelectric electrical and radiation performance advantages of PZT for space flight systems containing MEMS components. In Phase I, ANL will test PZT films and provide the information necessary to control the optimum radiation resistant PZT microstructure grain size. The resulting ferroelectric structure will be implemented into a radiation hard MEMS device. A production deposition capability for optimal microstructure resistance PZT, directly applicable to nonvolatile ferroelectric Random Access Memory (FeRAM) devices, will be produced. Commercial Applications and Other Benefits as described by the awardee: Superior radiation hardened precision ferroelectric materials should be implemented in accelerometers for space craft navigation systems. Ferroelectric/piezoelectric PZT films also use should find in nonvolatile memories and sensors subjected to radiation environments, or in general commercial applications not requiring radiation resistance. The controlled grain growth of the active ferroelectric layer should provide extended lifetime endurance due to reduced defects.

Principal Investigator:

Joseph D. Cuchiaro
7192609589
jcuchiaro@aol.com

Business Contact:

Joseph D. Cuchiaro
70224
7192609589
jcuchiaro@aol.com
Small Business Information at Submission:

Structured Materials Industries, Inc.
120 Centennial Avenue Piscataway, NJ 08854

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No