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Antimonide-based, High-speed, Low-power, Heterojunction Bipolar Transistor

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
53141
Program Year/Program:
2001 / SBIR
Agency Tracking Number:
01-0473
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Structured Materials Industries
201 Circle Drive North Unit # 102 Piscataway, NJ 08854-3723
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2001
Title: Antimonide-based, High-speed, Low-power, Heterojunction Bipolar Transistor
Agency / Branch: DOD / MDA
Contract: DASG60-01-P-0072
Award Amount: $65,000.00
 

Abstract:

Structured Materials Industries (SMI) proposes the development of antimonide-based, high-speed, low-power, heterojunction bipolar transistors (HBTs). These HBTs will have advantages over other compound semiconductor HBTs including lower power consumptionand zero turn on voltage. They are also required for the fabrication of all antimonide-based circuits integrating recent advances on optoelectronic antimonide-based devices. SMI will work closely with Sarnoff Corporation on this project. Sarnoff hasextensive experience in the growth and fabrication of antimonide based detectors, lasers, and thermophotovoltaic (TPV) devices. SMI/Sarnoff recently demonstrated a high-efficiency 2.4 micron InGaAsSb TPV cell with internal quantum efficiencies over 90% ata peak wavelength of 2.0 microns. This technology is transferable to the fabrication of antimonide-based HBTs. In the Phase I program, we will explore the most promising structure for a high-efficiency, large bandwidth HBT, building upon our existingInGaAsSb materials experience. The optimum material compositions and device design will be determined and proof-of-principle devices will be fabricated. In the Phase II program the semi-insulating substrate required to accurately measure high-speedoperation will be developed. The antimonide-based HBTs will be optimized and demonstration circuits using the devices will be fabricated.These HBTs will have advantages over other compound semiconductor HBTs including lower power consumption and zero turnon voltage. They are also required for the fabrication of all antimonide-based circuits integrating recent advances on optoelectronic antimonide-based devices.

Principal Investigator:

Gary Tompa
Senior Scientist
7328855909
gstompa@aol.com

Business Contact:

Gary Tompa
President
7328855909
gstompa@aol.com
Small Business Information at Submission:

STRUCTURED MATERIALS INDUSTRIES
120 Centennial Ave. Piscataway, NJ 08854

EIN/Tax ID: 223175106
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No