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A Non-Volatile SRAM For Spaceborne Applications Using a Novel Ferroelectric…

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
77683
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
055249
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Structured Materials Industries
201 Circle Drive North Unit # 102 Piscataway, NJ -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2006
Title: A Non-Volatile SRAM For Spaceborne Applications Using a Novel Ferroelectric Non-Linear Dielectric
Agency: NASA
Contract: NNM06AA42C
Award Amount: $69,999.00
 

Abstract:

A ferroelectric non-linear dielectric was recently discovered that, in their film form, possess a number of properties that make it an excellent choice for radiation-hardened electronics, particularly a radiation hardened (total dose hardened and SEE immune) non-volatile (NV) static random access memory (SRAM). Electrical measurements of these films demonstrated a relatively low dielectric constant (20), an inherent ability to form a native buffer layer when deposited directly on silicon, and a strong polarization hysteresis effect. These results indicate that this film may be used to replace the two n-channel and two p-channel transistors in a traditional 4-T SRAM latch cell with two n-channel and two p-channel non-linear dielectric field effect transistors (NLDFETs). The threshold voltage hysteresis effect of the NLDFET should achieve full SEU immunity to at least 80MeV-cm2/mg of ionizing radiation, when used in a standard 6-transistor SRAM cell structure, thus have ultra-fast access times (like commercial SRAMs) while offering full non-volatility. In Phase I we will provide the device proof of concept, then in Phase II build a prototype memory. Phase III will see commercialization by licensing and sales. The resulting NV-SRAM products have the potential to be orders of magnitude faster than any existing EEPROM or FLASH devices because the nonlinear dielectric film forms a native dielectric with silicon giving the structure resistance to "wear-out" or "data-retention" pr

Principal Investigator:

Joe D. Cuchiaro
Principal Investigator
7192609589
jcuchiaro@aol.com

Business Contact:

Gary S. Tompa
President
7323029274
gstompa@aol.com
Small Business Information at Submission:

Structured Materials Industries, Inc.
201 Circle Drive North, Suite 102/103 Piscataway, NJ 08854

EIN/Tax ID: 223175106
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No