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SiC Power MOSFET with Improved Gate Dielectric

Award Information

Agency:
Department of Energy
Branch:
N/A
Award ID:
80629
Program Year/Program:
2006 / STTR
Agency Tracking Number:
81208B06-I
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Structured Materials Industries
201 Circle Drive North Unit # 102 Piscataway, NJ 08854-3723
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2006
Title: SiC Power MOSFET with Improved Gate Dielectric
Agency: DOE
Contract: DE-FG02-06ER86288
Award Amount: $100,000.00
 

Abstract:

High power, SiC, metal-oxide semiconductor field effect transmitters (MOSFETs) are needed for a variety of applications, including nuclear physics research. However, SiC MOSFET device technology has been hampered by several device limitations, such as a low electron mobility, an unstable threshold voltage, poor gate oxide reliability, and the lack of a reliable gate dielectric. This project will develop a high performance, next generation SiC MOSFET based on the Atomic Layer Deposition (ALD) of high-dielectric constant (high-k) gate dielectrics. The use of ALD-deposited high-k gate oxides will reduce the thermal budget by eliminating the need for a high temperature thermal oxide growth step, resulting in a cheaper device. The high-k gate dielectrics will reduce the leakage current through the gate oxide, resulting in improved device performance. Finally, the ALD process will lead to a higher quality SiC/high-k interface, resulting in improved gate oxide reliability, improved electron mobilities, and a more stable threshold voltage. Phase I will first employ ALD to deposit thin aluminum oxide, aluminum silicate, hafnium oxide, and hafnium silicate on prototype SiC MOSFETs. The fabricated MOSFETs will be characterized for leakage current, threshold voltage, dielectric reliability, and electron mobility, in order to demonstrate improved MOSFET performance in comparison to a standard silicon dioxide gate dielectric. The results of Phase I will determine which gate dielectric is the most promising for further development in Phase II. Commercial Applications And Other Benefits as described by the Applicant: The improved SiC MOSFETs should be applicable to logging, drilling, industrial processes, aerospace systems, lighting, consumer electronics, industrial electronics, and the automotive industry. SiC devices also should find use in industrial motors and power supplies requiring high voltage. In addition to performance benefits, SiC offers significant cost saving opportunities by eliminating the need for expensive cooling systems.

Principal Investigator:

Edwin M. Dons
Dr.
7323029274
edons@structuredmaterials.com

Business Contact:

Gary S. Tompa
Dr.
7323029274
gstompa@aol.com
Small Business Information at Submission:

Structured Materials Industries, Inc.
201 Circle Drive North Suite 102-103 Piscataway, NJ 08854

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Cornell University
418 Phillips Hall
Ithaca, NY 14853
Contact: Michael G. Spencer
Contact Phone: (607) 255-6271
RI Type: Nonprofit college or university