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Band Gap Engineering Heterojunction Internal Photoemission Detector
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 1999Title: Band Gap Engineering Heterojunction Internal Photoemission DetectorAgency / Branch: DOD / MDAContract: 98-091Award Amount: $64,857.00
Abstract:
Not Available Recent developments in ferroelectric film surface modifications hold a greater promise for the development of lighweight ultra high energy density film capacitors. The proposed work will utilize a film structure modification method and several polymer film innovations that have been energy density. In the phase I program, we propose to design and fabricate high voltage, high current (<0.1ms discharge) capacitors, with an energy density of 10-15J/cc, based on existing and proven capacitor technology. The new capacitor design will based on Sigma¿s new hybrid treated polymer film technology that allows the production of polymer films that have improved self healing characteristics, higher breakdown strength, lower dielectric absorption and superior thermal and mechanical properties which result in higher current carrying ability. In the Phase I program 25.0¿F/5300V parts with energy densities of 10-15J/cc will be produced and tested. In the Phase II program, specific DoD applications will be addressed and capacitors will be produced and delivered for field testing.Small Business Information at Submission:Principal Investigator:
James Murguia
6034565686Business Contact:
SOLID STATE SCIENTIFIC CORP.
210 Brook Village Road, Suite 38 Nashua, NH 03062EIN/Tax ID:DUNS: N/ANumber of Employees: N/AWoman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: 44829 |
Program Year/Program: 1999 / SBIR |
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Agency Tracking Number: 98-091 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |