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Spire Corporation

Company Information
Address
One Patriots Park
Bedford, MA 01730-2396
United States



Information

UEI: RG46KJGARZF4

# of Employees: 65


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. Next-Generation, LED-based, Adjustable Spectrum, Pulsed Solar Simulator

    Amount: $99,623.00

    A key step in the manufacture of photovoltaic (PV) solar modules is their final test under simulated solar illumination. Manufacture of modules to produce megawatts of solar-generated power requires a ...

    SBIRPhase I2010Department of Energy
  2. Low Cost Multi Junction Solar Cells for Space Applications Incorporating Quantum Wells Sub Cells

    Amount: $99,885.00

    Spire Semiconductor proposes a novel MOCVD growth scheme that will substantially reduce the production costs of inverted multi-junction solar cells. Incorporating quantum well structures will be inve ...

    STTRPhase I2010Department of Defense Missile Defense Agency
  3. Development and Demonstration of High-Performance InAs/GaSb Superlattice Long Wavelength Infrared Focal Plane Arrays through Improved Sidewall Passiva

    Amount: $99,493.00

    Dark current plays an essential role in the performance of LWIR InAs/GaSb SL-based FPAs. Previous improvements in material quality and device design have significantly suppressed bulk contributions to ...

    SBIRPhase I2010Department of Defense Missile Defense Agency
  4. Strained Layer Superlattice Dual Band Mid-Wavelength Infrared/Long Wavelength Infrared (MWIR/LWIR) Focal Plane Arrays

    Amount: $79,593.00

    Spire Semiconductor proposes to make InAs/GaSb based MWIR/LWIR dual-band FPA photodetectors with low surface-leakage current using the unique processing and passivation techniques developed at Spire S ...

    SBIRPhase I2010Department of Defense Navy
  5. Cryogenic Diode Laser Array Pump for High Power YAG Lasers

    Amount: $749,854.00

    ABSTRACT: This Phase II SBIR proposal presents Spire’s plan to build, test, and deliver ultra-high power, cryogenically cooled diode laser array modules designed to optically pump the AFRL cryogeni ...

    SBIRPhase II2009Department of Defense Air Force
  6. Cryogenic Diode Laser Array Pump for High Power YAG Lasers

    Amount: $99,580.00

    This Phase I SBIR proposal describes a program that will design a cryogenic, liquid nitrogen (LN) cooling system for efficient operation of multi-kW level diode laser arrays, and determine the diode l ...

    SBIRPhase I2008Department of Defense Air Force
  7. Resonant Tunnelling Diode for High-Power Room-Temp

    Amount: $749,808.00

    The objective of this STTR program is to model, design, build and demonstrate a novel, hybrid solid-state, interband resonant tunneling diode (I-RTD) oscillator capable of operating across broad porti ...

    STTRPhase II2008Department of Defense Army
  8. Selenium Coated Dialysis Catheters for Reduced Biofilm Formation

    Amount: $992,385.00

    DESCRIPTION (provided by applicant): Infection is a major problem affecting function and longevity of dialysis catheters. Catheter-related sepsis occurs at alarmingly high rates, and often necessitate ...

    SBIRPhase II2008Department of Health and Human Services National Institutes of Health
  9. Microcrack Detection in Crystalline Silicon Solar Cells

    Amount: $99,734.00

    Both mono- and multi-crystalline silicon wafers and solar cells occasionally contain microcracks that are difficult or impossible to see with the human eye or even with a vision system. These cracks à ...

    SBIRPhase I2008Department of Energy
  10. New, Mid-IR Rare Earth Chalcogenide Glass Fiber Laser

    Amount: $99,906.00

    This Phase I Small Business Innovative Research project will develop the most promising rare earth-doped chalcogenide glass materials for high-power mid-IR (2-5 um) emission, and demonstrate laser act ...

    SBIRPhase I2007Department of Defense Air Force
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