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SILICON-ON-INSULATOR

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
2699
Program Year/Program:
1985 / SBIR
Agency Tracking Number:
2699
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SPIRE CORPORATION
1 PATRIOTS PARK BEDFORD, MA 01730-2396
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1985
Title: SILICON-ON-INSULATOR
Agency: NSF
Contract: N/A
Award Amount: $40,000.00
 

Abstract:

SILCON-ON-INSULATOR TECHNOLOGIES SUCH AS SILICON-ON-SAPPHIRE(SOS) HAVE BEEN SHOWN TO BE ESSENTIAL FOR PROVIDING ISOLATION OF TRANSISTORS FROM SUBSTRATES FOR INCREASED OPERATING SPEED. A PROMISING NEW APPROACH, SEPARATION BY ION IMPLANTATION OXYGEN (SIMOX), HAS ALREADY DEMONSTRATED HIGH QUALITY CIRCUITS WITHOUT THE SILICON DEFECTS OFTEN FOUND IN SOS. HOWEVER, THE LOW THROUGHPUT, HIGH COST, AND COMPLEXITY OF LARGE ION IMPLANTERS NEEDED FOR COMMERCIAL EXPLOITATION OF THE TECHNOLOGY IS A MAJOR OBSTACLE. (1) IT IS PROPOSED TO DEMONSTRATE A MORE EFFICIENT METHOD TO PRODUCE SIMOX WAFERS THAT IS CAPABLE OF BEING APPLIED TO EXISTING, LOW COST ION IMPLANTERS. THE TECHNIQUE IS TO IMPLANT AT FULL AREA, UNIFORM WAFER TEMPERATURES UP TO 1100 DEGREES C, WHICH PERMITS 8 TIMES HIGHER DOSE RATES THANPRESENTLY OBTAINABLE. ALL DEMONSTRATION SAMPLES WILL BE PRODUCED IN SPIRE'S EXISTING OXYGEN IMPLANT FACILITY. DEPENDENT ON SUCCESSFUL DEMONSTRATION OF ADEQUATE DEFECT DENSITY, EPITAXIALLY GROWN LAYERS, A SECOND PROJECT PHASE WILL BE TO OPTIMIZE THE PROCESS PARAMETERS AND SUPPLY EVACUATION SAMPLES TO COMMERCIAL AND GOVERNMENT USERS FOR THIS HIGH PERFORMANCE PRODUCT.

Principal Investigator:

S n bunker
SENIOR SCIENTIST
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp
Patriots Pk Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No