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ISOELECTRONIC DOPING TECHNIQUES

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
4419
Program Year/Program:
1986 / SBIR
Agency Tracking Number:
4419
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SPIRE CORPORATION
1 PATRIOTS PARK BEDFORD, MA 01730-2396
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1986
Title: ISOELECTRONIC DOPING TECHNIQUES
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $64,627.00
 

Abstract:

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMIC'S) MADE OF GAAS ARE BECOMING INCREASINGLY IMPORTANT FOR USE IN MILITARY SYSTEMS. A MAJOR LIMITATION TO ADVANCEMENT IN THIS FIELD IS THE QUALITY OF THE SEMI-INSULATINGGAAS SUBSTRATES AVAILABLE. SPIRE PROPOSES TO DEVELOP A TECHNIQUE FOR PRODUCING HIGH-QUALITY, LOW-DISLOCATION-DENSITY WAFERS BY THE USE OF AN ISOELECTRONICALLY DOPED GAAS BUFFER LAYER WHICH IS KNOWN TO REDUCE DEFECT PROPAGATION. THE ISOELECTRONIC DOPING OF THIS THIN LAYER IS EXPECTED TO AVOID THE PROBLEMS ENCOUNTERED WITH ISOELECTRONICALLY DOPED BULK SUBSTRATE MATERIALS AND SHOULD PERMIT THE DEPOSITION OF ADDITIONAL EPITAXIAL LAYERS OF DEVICE QUALITY. THE PHASE I EFFORT WILL SEEK TO DEMONSTRATE THE FEASIBILITY OF GROWING IN-DOPED GAAS BUFFER LAYERS IN A PRODUCTION-SIZE METALORGANIC CHEMICAL VAPOR DEPOSITION (MO-CVD) REACTOR AND TO ASSESS THEIR EFFECTIVENESS FOR DISLOCATION REDUCTION.

Principal Investigator:

Stanley m vernon
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp
Patriots Pk Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No