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INDIUM PHOSPHIDE SOLAR CELLS ON SILICON SUBSTRATES

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
6803
Program Year/Program:
1989 / SBIR
Agency Tracking Number:
6803
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SPIRE CORPORATION
1 PATRIOTS PARK BEDFORD, MA 01730-2396
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1989
Title: INDIUM PHOSPHIDE SOLAR CELLS ON SILICON SUBSTRATES
Agency: NASA
Contract: N/A
Award Amount: $499,994.00
 

Abstract:

IT IS PROPOSED TO GROW INDIUM PHOSPHIDE PHOTOVOLTAIC CELLS ON SILICON SUBSTRATES. AVOIDING THE USE OF INP SUBSTRATES WILL DRASTICALLY REDUCE THE COST AND WEIGHT OF THE CELLS, WHILE THE INHERENT RADIATION RESISTANCE AND ADVANTAGE OF INP LEAD US TO EXPECT A HIGHER END-OF-LIFE EFFICIENCY THAN CAN BE ACHIEVED WITH SILICON AS THE ACTIVE MATERIAL. THE CELLS WILL BE GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION, A TECHNIQUE WHICH IS AMENABLE TO LARGE-VOLUME PRODUCTION AND WITH WHICH EPITAXIAL GROWTH OF INP ON SI HAS ALREADY BEEN DEMONSTRATED. ALTHOUGH THE 8% DIFFERENCE IN CRYSTAL LATTICE SPACING IS EXPECTED TO RESULT IN SOME LOSS OF EFFICIENCY DUE TO THE FORMATION OF DISLOCATIONS, A NUMBER OF TECHNIQUES SHOW SOME PROMISE FOR REDUCING THE DISLOCATION DENSITY, BASED ON RECENT WORK WITH GAAS. THE GOAL OF THE PHASE I RESEARCH EFFORT WILL BE TO DEMONSTRATE THE FEASIBILITY OF FABRICATING THIS TYPE OF CELL BY ESTABLISHING A PROCESS FOR GROWING INP EPITAXIALLY ON SILICON AND EVALUATING THE RESULTING MATERIAL. ADJUSTINGTHE GROWTH PARAMETERS TO ACHIEVE THE HIGHEST FEASIBLE EFFICIENCY WILL BE THE SUBJECT OF PHASE II.

Principal Investigator:

Stanley M Vernon

Business Contact:

Small Business Information at Submission:

Spire Corp.
Patriots Park Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No