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SELECTIVE-AREA EPITAXY OF GALLIUM ARSENIDE ON SILICON

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
9138
Program Year/Program:
1990 / SBIR
Agency Tracking Number:
9138
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Spire Corporation
One Patriots Park Bedford, MA 01730-2396
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1990
Title: SELECTIVE-AREA EPITAXY OF GALLIUM ARSENIDE ON SILICON
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $500,000.00
 

Abstract:

THERMAL EXPANSION MISMATCH BETWEEN GALLIUM-ARSENIDE (GAAS) AND SILICON(SI) CAUSES SUBSTRATE BOWING AND CRACKING DURING COOLING FROM THE GROWTH TEMPERATURE. THIS IS A MAJOR OBSTACLE TO OVERCOME BEFORE THE FULL POTENTIAL OF THIS MATERIAL CAN BE REALIZED. THE FEASIBILITY IS BEING INVESTIGATED OF USING SELECTIVE-AREA EPITAXY OF GAAS ON SI TO REDUCE THE TENSILE STRESS TO A LEVEL WHERE SUCH SUBSTRATE BOWING AND CRACKING WILL NOT BE A PROBLEM. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS BEING UTILIZED FOR DEPOSITING AREAS OF GAAS, WITH VARYING DIMENSIONS, ON TWO-INCH SI SUBSTRATES THROUGH OPENINGS PATTERNED ON SILICON DIOXIDE (SIO2). THE EFFECTS OF THIS TECHNIQUE ONSUBSTRATE BOWING, FILM CRACKING, CRYSTALLOGRAPHIC PROOPERTIES AND TREADING DISLOCATIONS ARE BEING DETERMINED. SPECIFICALLY THE FOLLOWING ARE BEING ESTABLISHED: BASIC PROCESS FOR PATTERNING THERMALLY GROWN SIO2; MOCVD GROWTH PARAMETERS FOR THE DEPOSITION OF GAAS OVER PATTERNED SIO2 ON SI; AND WORKABLE PROCESS TO REMOVE GAAS AND SIO2 FROM UNWANTED AREAS. THE TECHNIQUES DEVELOPED ARE EXPECTED TO BE INSTRUMENTAL IN REDUCING THREADING DISLOCATIONS TO BE ADDRESSED IN A LATER STUDY. WHEN SUCCESSFUL, THIS TECHNOLOGY WOULD YIELD DEVICE QUALITY GAAS ON SI AND A PROCESS APPLICABLE FOR MONOLITHIC INTEGRATION OF GAAS AND SI DEVICES, GREATLY ENHANCING PRESENT DEVICE CAPABILITIES.

Principal Investigator:

Victor E Haven
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp.
Patriots Pk Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No