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GAAS VERTICAL SUPERLATTICES FOR MONOLITHICALLY INTEGRATABLE LWIR DETECTOR ARRAYS

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
15248
Program Year/Program:
1991 / SBIR
Agency Tracking Number:
15248
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Spire Corporation
One Patriots Park Bedford, MA 01730-2396
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1991
Title: GAAS VERTICAL SUPERLATTICES FOR MONOLITHICALLY INTEGRATABLE LWIR DETECTOR ARRAYS
Agency / Branch: DOD / DARPA
Contract: N/A
Award Amount: $49,936.00
 

Abstract:

ONE PROMISING APPROACH TO THE FABRICATION OF LONG-WAVELENGTH INFRARED (LWIR) DETECTORS IS THE USE OF GAAG-A1GAAS MULTIPLE-QUANTUM-WELL (MQW) STRUCTURES, ALTHOUGH A MAJOR DIFFICULTY IS CAUSED BY THE FACT THAT, TO BE DETECTED, THE RADIATION MUST BE PARALLEL TOTHE HETEROINTERFACES. THIS IS THE PROBLEM ADDRESSED. WE PROPOSE THEDEVELOPMENT OF A TECHNOLOGY TO ACCOMPLISH ATOMIC-SACALE GROWTH OF NEARLY VERTICAL SUPERLATTICE (NVSL) STRUCTURES CONTAINING GAAS MULTIPLE QUANTUM WELLS WITH INTERFACE PLANES PERPENDICULAR TO THE GAAS WAFER SURFACE. THIS WILL PERMIT THE FABRICATION OF LWIR GAAS-A1GAAS MQW DETECTORS WHICH FUNCTION WITH IR RADIATION THAT IS NORMAL TO THE WAFER SURFACE, ALLOWING FOR THE EASY FABRICATION OF MANY-ELEMENT DETECTOR ARRAYS AND MONOLITHIC INTEGRATION OF DETECTORS WITH OTHER GAAS-BASED SIGNAL PROCESSING COMPONENTS. OUR BASIC APPROACH IS TO USE THE REGULARLY SPACED ATOMIC STEPS ON A GAAS SUBSTRATE SURFACE ORIENTED A FEW DEGREES OFFTHE (100) AXIS TO NUCLEATE AND CONTROL THE GROWTH OF NEARLY VERTICAL SUPERLATTICES; DEPOSITION WILL BE BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). PHASE I WILL ESTABLISH THE MOCVD TECHNOLOGY NEEDED TO PRODUCE NVSL STRUCTURES USING GAAS AND ALAS REGIONS, WILLCHARACTERIZE THE PROPERTIES OF SUCH STRUCTURES, AND WILL ATTEMPT TO DEMONSTRATE A SIMPLE NVSL LWIR PHOTOCONDUCTIVE DETECTOR. PHASE II WILLSEEK TO OPTIMIZE CONTROL OF THE GROWTH AND DOPING OF NVSL REGIONS, TODEVELOP A METHOD FOR OPTICAL CONFINEMENT, TO FABRICATE AND TEST LWIR DETECTORS AND ARRAYS, AND TO MONOLITHICALLY INTEGRATE DETECTORS WITH OTHER CIRCUIT ELEMENTS. ANTICIPATED BENEFITS/POTENTIAL COMMERCIAL APPLICATIONS - SUCCESSFUL DEVELOPMENT OF THE PROPOSED TECHNOLOGY WILL LEAD TO THE ESTABLISHMENT OF A PRODUCTION-SCALE SOURCE OF HIGH-QUALITY MANUFACTURABLE,

Principal Investigator:

Stanley Vernon
Principal Investigator
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp
One Patriots Park Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No