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PSEUDOMORPHIC HEMTS FOR MILLIMETER WAVE COMMUNICATIONS

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
17123
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
17123
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SPIRE CORPORATION
1 PATRIOTS PARK BEDFORD, MA 01730-2396
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1992
Title: PSEUDOMORPHIC HEMTS FOR MILLIMETER WAVE COMMUNICATIONS
Agency: NASA
Contract: N/A
Award Amount: $486,412.00
 

Abstract:

ADVANCES IN SCIENTIFIC INSTRUMENTATION USED IN DEEP-SPACE MISSIONS HAVE GENERATED A NEED FOR HIGH DATA-TRANSMISSION RATES TO EARTH. IT MAY BE ECONOMICALLY FEASIBLE TO USE THE KA BAND (27-40 GHZ) FOR UP- AND DOWN-LINKING; THUS DEVELOPMENT OF MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT PHASED ARRAY DISTRIBUTION SYSTEMS FOR MILLIMETER WAVELENGTHS IS DEMANDED. THE PSEUDOMORPHIC, HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) IS UNEQUIVOCALLY THE BEST CANDIDATE FOR HIGH-POWER, HIGH-EFFICIENCY APPLICATIONS FROM 10-100 GHZ. ITS SUPERIOR LOW-NOISE PERFORMANCE PROVIDES THE OPPORTUNITY FOR INTEGRATION OF BOTH HIGH-POWER AND LOW-NOISE DEVICES ON THE SAME CHIP WITHOUT COMPROMISING THE PERFORMANCE OF EITHER COMPONENT. THE INNOVATION EXPLORED IN THIS PROJECT IS AN INVERTED, DOUBLE, HETEROJUNCTION HEMT WITH PULSE-DOPED DONOR AND PSEUDOMORPHIC CHANNEL LAYERS TO BE GROWN BY MOCVD, THE DEPOSITION TECHNIQUE OF CHOICE FOR HIGH-QUALITY PRODUCTION CAPABILITY. THE PHASE I PROJECT WILL DEMONSTRATE FEASIBILITY OF CONCEPT; PHASE II WILL RESULT IN AN OPTIMIZED STRUCTURE SUITABLE FOR PRODUCTION. ADVANCES IN SCIENTIFIC INSTRUMENTATION USED IN DEEP-SPACE MISSIONS HAVE GENERATED A NEED FOR HIGH DATA-TRANSMISSION RATES TO EARTH. IT MAY BE ECONOMICALLY FEASIBLE TO USE THE KA BAND (27-40 GHZ) FOR UP- AND DOWN-LINKING; THUS DEVELOPMENT OF MONOLITHIC MICROWAVE INTEGRATED-CIRCUIT PHASED ARRAY DISTRIBUTION SYSTEMS FOR MILLIMETER WAVELENGTHS IS DEMANDED. THE PSEUDOMORPHIC, HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) IS UNEQUIVOCALLY THE BEST CANDIDATE FOR HIGH-POWER, HIGH-EFFICIENCY APPLICATIONS FROM 10-100 GHZ. ITS SUPERIOR LOW-NOISE PERFORMANCE PROVIDES THE OPPORTUNITY FOR INTEGRATION OF BOTH HIGH-POWER AND LOW-NOISE DEVICES ON THE SAME CHIP WITHOUT COMPROMISING THE PERFORMANCE OF EITHER COMPONENT. THE INNOVATION EXPLORED IN THIS PROJECT IS AN INVERTED, DOUBLE, HETEROJUNCTION HEMT WITH PULSE-DOPED DONOR AND PSEUDOMORPHIC CHANNEL LAYERS TO BE GROWN BY MOCVD, THE DEPOSITION TECHNIQUE OF CHOICE FOR HIGH-QUALITY PRODUCTION CAPABILITY. THE PHASE I PROJECT WILL DEMONSTRATE FEASIBILITY OF CONCEPT; PHASE II WILL RESULT IN AN OPTIMIZED STRUCTURE SUITABLE FOR PRODUCTION.

Principal Investigator:


0

Business Contact:

Small Business Information at Submission:

Spire Corp.
Patriots Pk Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No