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Growth of Boron Phosphide for High Temperature Electronic Devices

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
18049
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
18049
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SPIRE CORPORATION
1 PATRIOTS PARK BEDFORD, MA 01730-2396
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1992
Title: Growth of Boron Phosphide for High Temperature Electronic Devices
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $49,023.00
 

Abstract:

Invent a material good for transistors running at 2000 degrees Fahrenheit and the world will beat a path to your door. That's what the Spire Corporation hopes wil happen; Spire proposes to take advantage of boron phosphide's potential as a high-temperature, wide-bandgap electronic material. Thin-film boron phosphide isn't easy to grow; the Japanese have been trying for years. Spire thinks the answer is low-pressure chemical vapor deposition. Low pressure will keep gas molecules far enough apart to stop "snow" from forming but will still permit rapid crystal growth, important because 300 micron thick free-standing wafers are the program's goal. Always looking to the marketplace, Spire sees itself as becoming the first on-shore supplier of crystalline boron phosphide.

Principal Investigator:

Stanley Vernon
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp.
One Patriots Park Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No