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Multi-Quantum Well Lateral-Field-Effect Electro-Refraction

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
Spire Corporation
One Patriots Park Bedford, MA 01730-2396
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 1992
Title: Multi-Quantum Well Lateral-Field-Effect Electro-Refraction
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $49,765.00


Band gap resonant optical non-linearities in III-V compound semiconductor materials provide the basis for novel components, allowing advances in optical signal processing. Of particular interest are temporal and spatial light modulators, which find applications in optical interconnects, optical computing, and logic circuits. Spire will characterize an advanced GaAs multi-quantum well structure which will exhibit the Lateral-Electric-Field-Induced-Refraction (LEFIR) effect. The lightwave propogates transverse to the stack of grown layers, while the electric field, applied laterally due to the removal of a two-dimensional electron gas supplied by planar doping, induces changes in the refractive index of the active region containing the quantum wells. The transmissive modes are shifted in wavelength when the effective refractive index of the active region is altered by the applied field, modulating intensity. Without mirrors, the device can shift the phase of incident light. EFIR modulators can be extended into two-dimensional arrays with applications as spatial light modulators.

Principal Investigator:

H. Paul Maruska

Business Contact:

Small Business Information at Submission:

Spire Corp.
One Patriots Park Bedford, MA 01730

Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No