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GaAs-Ge Alloys for Optical Processing at 1.3-1.5 microns

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
18093
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
18093
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Spire Corporation
One Patriots Park Bedford, MA 01730-2396
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1992
Title: GaAs-Ge Alloys for Optical Processing at 1.3-1.5 microns
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $50,458.00
 

Abstract:

Fast electronics talking to optical circuits built right on the same chip are everybody's goal; problem is, it's not so easy to get there with infrared optics. Spire proposes a clever way around this, doubly clever because it's based on well known materials and methods combined in new ways. Starting with GaAs, an excellent choice for high-speed electronics but an infrared dead-head, by mixing in a little Ge, Spire will create a new alloy which is optically alive and fits perfectly on GaAs substrates. Infrared emitters and detectors can be built in the alloy, fast electronics in the GaAs. If this works, Spire argues, it's lower cost and higher reliability will knock existing infrared technologies right out of the market for fiber optic communications.

Principal Investigator:

Stanley Vernon
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp.
One Patriots Park Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No