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DEPOSITION OF YTTRIUM STABILIZED ZIRCONIA ON SILICON TO FORM SILICON ON…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
21711
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
21711
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Spire Corporation
One Patriots Park Bedford, MA 01730-2396
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: DEPOSITION OF YTTRIUM STABILIZED ZIRCONIA ON SILICON TO FORM SILICON ON INSULATOR SUBSTRATES
Agency: NSF
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

HETEROEPITAXIAL GROWTH OF YTTRIA STABILIZED ZIRCONIA (YSZ) ON SILICON, WHICH CAN BE USED FOR SILICON-ON-INSULATOR AND AS A SUBSTRATE FOR FERROELECTRIC AND HIGH TEMPERATURE SUPERCONDUCTING MATERIALS IS BEING DEMONSTRATED. BECAUSE IT OFFERS POTENTIAL IMPROVEMENTS IN THE QUALITY OF TODAY'S TECHNOLOGIES AT A FRACTION OF THE COST, ITS DEVELOPMENT COULD OVERCOME A MAJOR BARRIER TO WIDESPREAD USE OF SILICON-ON-INSULATOR SUBSTRATES. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) IS USED TO DEPOSIT YSZ ON HYDROGEN-PASSIVATED SILICON. THE DEPOSITED FILMS ARE FULLY CHARACTERIZED FOR COMPOSITION, CRYSTAL STRUCTURE, AND ELECTRICAL PROPERTIES.

Principal Investigator:

Anton C Greenwald
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp.
1 Patriots Park Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No