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Thin-film Nonlinear Optical Material: Ordered Ga(1-x)In(x)P On GaAs

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
26211
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
26211
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Spire Corporation
One Patriots Park Bedford, MA 01730-2396
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: Thin-film Nonlinear Optical Material: Ordered Ga(1-x)In(x)P On GaAs
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $76,193.00
 

Abstract:

GROWTH OF OEDERED Ga(1-x)In(x)P ON GaAs, AS A THIN FILM MATERIAL SHOWING VERY STRONG NONLINEAR OPTICAL (nlo) EFFECTS, WILL BE ACCOMPLISHED BY METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD). IT IS WELL KNOWN THAT MOCVD-GROWN Ga(1-x)In(x)P DISPLAYS VERY STRONG ORDERING OF THE Ga- AND In-SUBLATTICES, AND THAT DEGREE OF ORDERING IS CONTROLLED BY GROWTH PARAMETERS. STRONG ORDERING SHOULD LEAD TO THE LARGE BIREFRINGENCE NEEDED FOR NLO APPLICATIONS. PHASE I WILL SEEK TO FIND DEPOSITION PARAMETERS WHICH YIELD THE GREATEST DEGREE OF ORDERING AND THE STRONGEST NONLINEAR OPTICAL EFFECT. MEASUREMENTS WILL INCLUDE ATOMIC ORDERING AND BIREFRINGENCE VERSUS GROWTH CONDITIONS. PHASE II WILL OPTIMIZE THE GROWTH OF Ga(1-x)In(x)P SO THAT THE SECOND-ORDER NONLINEAR OPTICAL SUSCEPTIBILITY AND BIREFRINGENCE ARE MAXIMIZED. WE WILL THEN DESIGN, FABRICATE, AND TEST A GaAs-Ga(1-x)In(x)P DEVICE WHICH UTILIZES THE NLO PROPERTIES, SUCH AS AN OPTICAL PARAMETRIC OSCILLATOR. DEVELOPMENT MAY BE EXTENDED TO (Al(y)Ga(1-y))(0.5)In(0.5)P, IN ORDER TO INCREASE THE BANDGAP.

Principal Investigator:

Stanley Vernon
6172756000

Business Contact:

Small Business Information at Submission:

Spire Corp.
One Patriots Park Bedford, MA 01730

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No