Integrated High-Frequency Vacuum Field Emission Transistors

Award Information

Agency: Department of Defense	Branch: Air Force	Award ID: 57440	Program Year/Program: 2003 / SBIR
Agency Tracking Number: 021NM-2950	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Stellar Micro Devices
2020 Centimeter Circle Austin, TX 78758-4956
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 2: Fiscal Year: 2003

Title: Integrated High-Frequency Vacuum Field Emission Transistors

Agency / Branch: DOD / USAF

Contract: F29601-03-C-0047

Award Amount: $748,734.00

Abstract:
Four types of Vacuum Field Emission Transistor (VFET) will be developed for integration into GaAs MMIC amplifer circuits. All VFETs lower circuit noise, partly by substituting vacuum gaps for noisy channels in solid state devices. VFETs alsosignificantly increase device speed and power performance, moving the trade-off curve out by possibly an order of magnitude. VFETs will be integrated on the same substrates as solid-state MMICs, providing a more reliable, elegant and less expensivealternative to microwave power modules connected to MMICs. Two types of GaAs edge emitter VFET, one all-metal and one GaN edge emitter will be designed, fabricated and characterized. Integration with MMICs can be by building in the VFET at the samesubstrate layers as the MMIC, by fabricating on top of the MMIC or by bonding through flip chip and other methods.

Principal Investigator:
Leonid D. Karpov
Chief Scientist
5129977782
lkarpov@yahoo.com

Business Contact:
Mark Eaton
President & CEO
5129977781
eaton@stellardisplay.com

Small Business Information at Submission:

STELLAR MICRO DEVICES
2020 Centimeter Circle Austin, TX 78758

EIN/Tax ID: 742843930

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No