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High Power Vacuum GaN

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00164-04-C-6057
Agency Tracking Number: B045-013-0282
Amount: $98,496.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: MDA04-T013
Solicitation Number: N/A
Timeline
Solicitation Year: 2004
Award Year: 2004
Award Start Date (Proposal Award Date): 2004-09-14
Award End Date (Contract End Date): 2005-03-13
Small Business Information
2020 Centimeter Circle
Austin, TX 78758
United States
DUNS: 010600422
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Leonid Karpov
 Chief Scientist
 (512) 997-7782
 lkarpov@yahoo.com
Business Contact
 Mark Eaton
Title: President & CEO
Phone: (512) 997-7781
Email: eaton@stellardisplay.com
Research Institution
 MIT
 Tayo Akinwande
 
39-553a, MIT
Cambridge, MA 02139
United States

 (617) 258-7974
 Nonprofit College or University
Abstract

High power GaN devices are proposed in which vacuum gaps increase anode voltage and power. Anode placement will be optimized for device performance and power dissipation.

* Information listed above is at the time of submission. *

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