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High Power Vacuum GaN
Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: N00164-04-C-6057
Agency Tracking Number: B045-013-0282
Amount:
$98,496.00
Phase:
Phase I
Program:
STTR
Solicitation Topic Code:
MDA04-T013
Solicitation Number:
N/A
Timeline
Solicitation Year:
2004
Award Year:
2004
Award Start Date (Proposal Award Date):
2004-09-14
Award End Date (Contract End Date):
2005-03-13
Small Business Information
2020 Centimeter Circle
Austin, TX
78758
United States
DUNS:
010600422
HUBZone Owned:
No
Woman Owned:
No
Socially and Economically Disadvantaged:
No
Principal Investigator
Name: Leonid Karpov
Title: Chief Scientist
Phone: (512) 997-7782
Email: lkarpov@yahoo.com
Title: Chief Scientist
Phone: (512) 997-7782
Email: lkarpov@yahoo.com
Business Contact
Name: Mark Eaton
Title: President & CEO
Phone: (512) 997-7781
Email: eaton@stellardisplay.com
Title: President & CEO
Phone: (512) 997-7781
Email: eaton@stellardisplay.com
Research Institution
Name: MIT
Contact: Tayo Akinwande
Address:
Phone: (617) 258-7974
Type: Nonprofit College or University
Contact: Tayo Akinwande
Address:
39-553a, MIT
Cambridge, MA
02139
United States
Phone: (617) 258-7974
Type: Nonprofit College or University
Abstract
High power GaN devices are proposed in which vacuum gaps increase anode voltage and power. Anode placement will be optimized for device performance and power dissipation.
* Information listed above is at the time of submission. *