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STTR Phae II: Rapid Nondestructive Residual Stress Characterization of…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
63618
Program Year/Program:
2005 / STTR
Agency Tracking Number:
0319448
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Stress Photonics, Inc.
3002 Progress Road Madison, WI 53716
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2005
Title: STTR Phae II: Rapid Nondestructive Residual Stress Characterization of Semiconductor Materials
Agency: NSF
Contract: 0450704
Award Amount: $494,436.00
 

Abstract:

This Small Business Technology Transfer (STTR) Phase II research project aims to introduce a series of instruments to the microelectronics industry that allow rapid, high resolution residual stress inspection, defect location and quantification. In silicon wafer manufacture, small cracks may appear at the beginning of the wafer process and must be located to avoid adding value to damaged wafers. In semiconductor wafer bonding, de-bond defects may result from trapped dust particles and gas bubbles resulting in reliability and performance degradation. The infrared grey-field polariscope was able to locate these defects and quantify the residual stress state using a laboratory-based system. Now, this technology will be interfaced with optimized detectors to improve defect resolution and introduced onto a microscope platform to improve inspection of smaller defects. Finally, these stress analysis tools will be integrated into an automated inspection system that will be applicable to on-line inspection of the above-mentioned defects. The profitability of many devices and processes can be significantly hindered by low process yields. Yields can be improved with process control tools that catch stress variations immediately, and customer satisfaction and device reliability improvements made by implementing affordable 100% inspection to eliminate all damaged devices. In addition to making our nation's microelectronics industry more competitive, this tool will advance the state of scientific knowledge by improving resolution limits and provide quantitative measurements for researchers who study semiconductor substrates, wafer bonding, MEMS and integrated circuits.

Principal Investigator:

Jon R. Lesniak
Mr.
6082241230
Jlesniak@stressphotonics.com

Business Contact:

Jon R. Lesniak
6082241230
Jlesniak@stressphotonics.com
Small Business Information at Submission:

Stress Photonics, Inc.
3002 Progress Road Madison, WI 53716

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Univ. of IL-Urgana-Champaign
1901 South First St., Suite A
Urbana, IL 61801
Contact: Thomas J. Mackin
Contact Phone: (217) 244-1016
RI Type: Nonprofit college or university