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SVT ASSOCIATES INC

Company Information
Address
7620 EXECUTIVE DR
EDEN PRAIRIE, MN 55344-3677
United States


http://svta.com

Information

UEI: MLVQMLJLC139

# of Employees: 35


Ownership Information

HUBZone Owned: No

Socially and Economically Disadvantaged: No

Woman Owned: No



Award Charts




Award Listing

  1. GaAsSb/AlGaAsP Superlattice Polarized Electron Source

    Amount: $999,810.20

    The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at DoE Jefferson Lab and the Stanford Linear Accelerato ...

    SBIRPhase II2014Department of Energy
  2. Efficient EMI/RFI attenuation by GaN-based coating on spinel windows

    Amount: $79,925.00

    With the advent of electromagnetic and electro-optical sensors in modern military platforms, the issue of detectability extends well beyond that of visible light. The suppression of Electromagnetic In ...

    SBIRPhase I2014Department of Defense Navy
  3. GaAsSb/AlGaAsP Superlattice Polarized Electron Source

    Amount: $149,988.00

    The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at the Stanford Linear Accelerator Center (SLAC) and Do ...

    SBIRPhase I2013Department of Energy
  4. GaAsSb/AlGaAs Superlattice High-Polarization Electron Source

    Amount: $999,924.00

    The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at DoE Jefferson Lab and the Stanford Linear Accelerato ...

    SBIRPhase II2013Department of Energy
  5. Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays

    Amount: $124,884.00

    SVT Associates proposes an novel type II superlattice structure to extend the cutoff wavelength and CBIRD SL photo diode structure with unipolar barriers to suppress dark current of SL detectors grown ...

    SBIRPhase I2013National Aeronautics and Space Administration
  6. High-Detectivity Type-II Superlattice Detectors for 6-14 um Infrared Applications

    Amount: $124,859.00

    SVT Associates proposes an novel type II superlattice structure to extend the cutoff wavelength and CBIRD SL photo diode structure with unipolar barriers to suppress dark current of SL detectors grown ...

    SBIRPhase I2012National Aeronautics and Space Administration
  7. Monolithically integrated AlN/GaN electronics for harsh environments

    Amount: $96,891.00

    Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to ...

    SBIRPhase I2012National Aeronautics and Space Administration
  8. Enhanced Quantum Efficiency of Photocathodes with Polarized Emission

    Amount: $1,000,000.00

    Photocathodes with spin-polarized electron emission are used in physics research. Current photocathodes offer high polarization, but low total currents, and have limited lifetime. Research involving t ...

    SBIRPhase II2012Department of Energy
  9. Large Area GaN-Based Avalanche Photodiodes for Operation in Extreme Environments

    Amount: $149,956.00

    For several decades photomultiplier tubes (PMTs) have been the main technology for sensitive and low noise detection of photons in many high energy physics experiments. However, compared to solid-st ...

    SBIRPhase I2012Department of Energy
  10. GaAsSb/AlGaAs Superlattice High-Polarization Electron Source

    Amount: $149,878.00

    The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at the Stanford Linear Accelerator Center (SLAC). Futur ...

    SBIRPhase I2012Department of Energy
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