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Company Information:

Company Name:
SVT Associates, Inc.
Address:
7620 executive drive
eden prairie, MN 55344
Phone:
(952) 934-2100
URL:
N/A
EIN:
411764876
DUNS:
876868647
Number of Employees:
35
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $10,020,521.00 126
SBIR Phase II $18,306,762.20 28
STTR Phase I $1,183,283.00 13
STTR Phase II $2,499,484.00 4

Award List:

INNOVATIVE MIRROR TECHNOLOGY FOR X-RAY REFLECTIVE OPTICS

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$47,836.00
Agency:
DOE
Principal Investigator:
Abstract:
The proposed program will address the critical needs of x-ray/uv wavelength mirror technology by proposing a new fabrication technique. called ion enhanced molecular beam deposition, this technique is capable of forming high reflectivity optical elements by vacuum depositing artificially structured… More

STRAINED TYPE II SUPERLATTICE FOR LONG WAVELENGTH INFRARED DETECTORS

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$49,625.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Peter Chow , Principal Investigator
Abstract:
As an alternative to mercury-cadmium telluride (mct), we propose to investigate the optical properties of a recently invented class of type ii strained-layer superlattices made of (ga, as)related compounds. the new concept has advantages compared with previous efforts in that small band-gaps may be… More

AUTOMATED MBE PROCESS WITH REAL TIME SENSOR CONTROL

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$49,625.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter P Chow , Principal Investigator
Abstract:
N/a

STRAINED TYPE II SUPERLATTICE INFRARED DETECTORS

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$49,623.00
Agency:
NASA
Principal Investigator:
Abstract:
N/a

AUTOMATED MBE PROCESS WITH REAL TIME SENSOR CONTROL

Award Year / Program / Phase:
1992 / SBIR / Phase II
Award Amount:
$478,606.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter P Chow , Principal Investigator
Abstract:
We propose an automated molecular beam epitaxy (mbe) process for reproductable growth of semiconductor device structures. we will apply rheed and thermal oscillation techniques to control the rate andcomposition of the layers and to ensure that the growth proceeds underoptimum conditions. a mass… More

STRAINED TYPE II SUPERLATTICE INFRARED DETECTORS

Award Year / Program / Phase:
1992 / SBIR / Phase II
Award Amount:
$484,347.00
Agency:
NASA
Principal Investigator:
Abstract:
This project will investigate the optical properties of a recently invented class of type-ii, strained-layer superlattices made of gaas related compounds. the new concept has advantages, compared with previous efforts, in that small band gaps may be achieved with sufficiently thin repeating layers… More

PRECISE FLUX CONTROL FOR LATTICE MATCHED SUPERLATTICE MATERIALS

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,646.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. Peter P. Chow
Abstract:
An effective method for reducing flux transients in molecular beam epitaxy (mbe) effusion cell source is proposed. mbe is a useful technique for fabricating many important electronic and optoelectronic devices whose performance depends critically on reproducible material structures. tight control of… More

INFRARED ASTRONOMY DETECTOR ARRAY APPLICATIONS

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,704.00
Agency:
NSF
Principal Investigator:
Dr. Peter P. Chow , Vp Research And Development
Abstract:
As an alternative to mercury-cadmium telluride (mct), we propose to investigate the optical properties of a recently invented class of type ii strained-layer superlattices made of (ga,as) related compounds. the new concept has advantages compared with previous efforts in that small band-gaps may be… More

Carbon and Tellurium Doping Sources for Molecular Beam Epitaxy (MBE)

Award Year / Program / Phase:
1992 / SBIR / Phase I
Award Amount:
$49,578.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr Peter P. Chow
Abstract:
N/a

Carbon and Tellurium Doping Sources for Molecular Beam Epitaxy (MBE)

Award Year / Program / Phase:
1993 / SBIR / Phase II
Award Amount:
$240,336.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr Peter P. Chow
Abstract:
We propose two novel sources for improved carbon and tellurium dopants in MBE growth for III-V compounds semiconductors where heavy doping is required. The compact carbon source is electron beam heated and has a very fast thermal response. It is expected that increased monatomic carbon species in… More

VLWIR Detector Using Strained Type II Superlatice

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$49,663.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow
Abstract:
THE RECENTLY INVENTED TYPE II STRAINED LAYER SUPERLATTICES MADE OF GaInSb/InAs HAVE SHOWN GREAT PROMISE AS IR DETECTORS. MADE OF PERIODS OF MATERIALS EACH ONLY A FEW ATOMS THICK. IT HAS SEVERAL DESIRABLE OPTICAL AND TRANSPORT PROPERTIES WHICH WOUDL BECOME EVEN MORE IMPORTANT FOR VLWIR (>12um)… More

Quantum Well and Superlattice IR Detector Development

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$49,663.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter Chow
Abstract:
Strained layer superlattices of GaInSb/InAs have been shown to have many desirable optical and transport properties, especially for VLWIR (>12um) detection. We propose to explore its fabrication and device applications by growing on polar orientations. It is expected the piezoelectric effect would… More

(AlGaN)x(SiC)l-x Semiconductors For High Temperature Electronics

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$48,204.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James Van Hove
Abstract:
A SIGNIFICANT NEED EXISTS FOR ELECTRONIC DEVICES OPERATING ABOVE 200 DEGREE C. THESE DEVICES COULD BE USED IN SENSING AND CONTROL APPLICATIONS IN TURBINE, HIGH POWER AND HIGH FREQUENCY MICROWAVE RADAR SYSTEMS, AUTOMOTIVE ELECTRONICS AND SATELLITE COOMUNICATION SYSTEMS. WE PROPOSE TO MEET THIS NEED… More

Solar-Blind, Aluminum-Gallium-Nitrogen, Ultraviolet Detector Arrays

Award Year / Program / Phase:
1993 / SBIR / Phase I
Award Amount:
$50,000.00
Agency:
NASA
Principal Investigator:
James Van Hove , Senior Staff Scientist
Abstract:
N/a

IN(X)GA(1-X)N GROWTH BY ION BEAM EPITAXY FOR VISIBLE AND UV LIGHT EMITTERS

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$59,980.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James Van Hove, Phd
Abstract:
A significant need exists for solid state blue and UV light emitters. These wavelengths are useful for high density optical data storage and for visible flat panel displays. We propose to meet this need with InGaN. In(x)Ga(1-x)N is a direct, wide band gap semiconductor (2 to 3.5 ev). Its director… More

ULTRA-HIGH ABSORPTION L-VALLEY GASB QUANTUM-WELL INFRARED DETECTORS

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$59,980.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow, Phd
Abstract:
A newly discovered class of normal incidence quantum well (QW) photodetectors is proposed for very long wavelength (14-20 um) infrared detection. The material consists of bandgap engineered GaSb and GaAlSbAs L-valley QW's and its detection is based on interconduction subband transitions. Because… More

QUANTUM WELL LASER DIODES FOR MID-IR (2-5 M) WAVELENGTHS

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$64,591.00
Agency:
NSF
Principal Investigator:
James Van Hove
Abstract:
Researchers are fabricating (a1gainassb) quantum well laser structures for 2-5 m ir applications. this material system has desired properties and is compatible with iii-v device processing technology. the laser diodes are grown by molecular beam epitaxy method. researchers use in-situ monitoring… More

In-Situ Control Using Spectral Pyrometric Interferometry for Electronics Manufacturing

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$99,485.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Andrew Wowchak
Abstract:
The future manufacturing of electronic devices will require even better control of the manufacturing process. Temperature and thin film thickness are two most critical variables in many production processes such as chemical vapor deposition (CVD), rapid thermal processing (RTP), and plasma etching.… More

Solar-Blind, Aluminum-Gallium-Nitrogen, Ultraviolet Detector Arrays Deposited by Atomic Nitrogen Epitaxy

Award Year / Program / Phase:
1994 / SBIR / Phase I
Award Amount:
$69,709.00
Agency:
NASA
Principal Investigator:
James Van Hove
Abstract:
N/a

Advanced UHV System for Producing High Performance Silicon Based Photoemmisive Infrared Sensors

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$79,924.00
Agency / Branch:
DOD / USAF
Principal Investigator:
P.p. Chow
Abstract:
An advance ultra-high vacuum (UHV) deposition system will be designed for fabrication of group IV photoemissive materials for high performance long wavelength infrared (8-12 um) focal plane applications. Device candidates including silicides, and silicon germanium superlattices and quantum wells,… More

Multi-Wavelength Infrared Detector Array For Spectral Discrimination

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$69,344.00
Agency:
NASA
Principal Investigator:
Peter Chow , Gen. Mgr.
Abstract:
N/a

Smart Linear Motion Oven (LIMO) for Precision Group III Beam Flux Control in MBE

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$79,933.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. P.p. Chow
Abstract:
N/a

Optimization of MBE Growth of III-V Nitrides for High Temperature Electronic Applications using Multiple RF Nitrogen Plasma Sources

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$79,282.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr James M Van Hove
Abstract:
N/a

Solar-Blind, Aluminum-Gallium-Nitrogen, Ultraviolet Detector Arrays

Award Year / Program / Phase:
1995 / SBIR / Phase II
Award Amount:
$598,600.00
Agency:
NASA
Principal Investigator:
James Van Hove , Senior Staff Scientist
Abstract:
N/a

TeraHertz Oscillators Based Upon Resonant Tunnel Diodes

Award Year / Program / Phase:
1995 / SBIR / Phase I
Award Amount:
$64,400.00
Agency:
NSF
Principal Investigator:
Mark Sweeny
Abstract:
N/a

Smart Linear Motion Oven (LIMO) for Precision Group III Beam Flux Control in MBE

Award Year / Program / Phase:
1996 / SBIR / Phase II
Award Amount:
$580,984.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. P.p. Chow
Abstract:
Molecular Beam Epitaxy (MBE) is a key fabrication technology for high performance III-V and other semiconductor devices of importance to many DoD and commercial applications. A variable group III element source flux would provide agile vertical layer composition control required for sophisticated… More

AlGaN-Channel Transistors for Power Management and Distribution

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$59,533.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James M. Van Hove
Abstract:
A significant need exists for power switching transistors used in spacecraft power management and distribution (PMAD) modules which can operate at high temperatures (400 C). SVT Associates proposes to meet-the need for high temperature electronic devices with an innovative large gate-width GaN… More

GaAlN Ultraviolet Surface Emitting Lasers

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$59,856.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James M. Van Hove
Abstract:
SVT Associates proposes to demonstrate UV surface emitting lasers in the III-N material system using a proprietary epitaxial metal layer to form the bottom mirror. This metal layer significantly reduces the material deposition time and acts as a lattice matched layer for depositing the laser… More

Epitaxial Growth of Silicon Carbide (SiC) on Compliant Substrates by Ion Enhanced MBE

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$99,500.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr Peter Chow
Abstract:
Silicon carbide is a semiconductor ideally suited for high power, frequency, speed and temperature applications. This project proposes a unique ion beam synthesis method of epitaxial silicon carbide on compliant substrates. The technique produces low energy, high current ions to promote… More

Integrated Submillimeter-wve Receivers Utilizing Resonant Tunnels Diodes

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$65,901.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Dr. Mark Sweeny
Abstract:
We propose research leading to the development of an integrated sub millimeter wave downconverter utilizing Resonant Tunnel Diodes (RTD's) as the local oscillator. RTD's have already been demonstrated at Superior Vacuum Systems Associates (SVTA). Phase I research will develop the MBE growth and… More

Multi-Wavelength Infrared Detector Array For Spectral Discrimination

Award Year / Program / Phase:
1996 / SBIR / Phase II
Award Amount:
$586,660.00
Agency:
NASA
Principal Investigator:
Peter Chow , Gen. Mgr.
Abstract:
N/a

INTEGRATED SUBMILLIMETER-WAVE RECEIVERS UTILIZING RESONANT TUNNEL DIODES

Award Year / Program / Phase:
1996 / SBIR / Phase I
Award Amount:
$67,279.00
Agency:
NASA
Principal Investigator:
Mark F. Sweeny , Senior Staff Scientist
Abstract:
N/a

FIBER BRAGG GRATING CRYOGENIC TEMPERATURE SENSORS

Award Year / Program / Phase:
1996 / SBIR / Phase II
Award Amount:
$436,122.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr. Peter P. Chow , Principal Investigator
Abstract:
N/a

Low Phase Noise, Wideband, Antimonide, DHBT Oscillator MMICs for Millimeter Wave C4I Applications

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$99,959.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Robert Hickmanii
Abstract:
Innovative low phase noise, wideband oscillator MMICs are proposed for high performance millimeter wave applications. Double heterostructure bipolar transistor (DHBT) deposited by MBE with carbon doped GaAsSb base layers and InP emitter and collector layers will be fabricated and tested under Phase… More

AlInGaN Light Emitting Diodes for Spectroscopic Applications

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$74,195.00
Agency:
DOE
Principal Investigator:
Dr. Jody J. Klaassen , Senior Research Scientist
Abstract:
122 AlInGaN Light Emitting Diodes for Spectroscopic Applications--SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344-3677; (612) 934-2100 Dr. Jody J. Klaassen, Principal Investigator Dr. Peter Chow, Business Official DOE Grant No. DE-FG02-97ER82490 Amount: $74,195 A… More

MBE Sulfur Passivation of InP for High Power Millimeter Wave Electronics

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$99,959.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Robert Hickman, Ii
Abstract:
High frequency power semiconductor devices based on metal insulator semiconductor field effect transistor (MISFET) structures have long been desired for microwave and millimeter wave (mm wave) applications. Unfortunately, complex interface defects and Fermi level pinning at the surface of both… More

High Temperature AlN Gate Dielectric Field Effect Transistors

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$69,992.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Dr. James M. Van Hove
Abstract:
A major innovation is needed to produce power devices which can operate at high temperatures (400 _C). Current Silicon power transistors have a maximum operating temperature typically below 150*C. High-temperature and high power electronics dictate a wide bandgap semiconductor such as SiC or GaN… More

Hydrocarbon Gas Sensors Based on Wide Band-Gap Semiconductors

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$74,195.00
Agency:
DOE
Principal Investigator:
Dr. Jody J. Klaassen , Senior Research Scientist
Abstract:
19 Hydrocarbon Gas Sensors Based on Wide Band-Gap Semiconductors--SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344-3677; (612) 934-2100 Dr. Jody J. Klaassen, Principal Investigator Dr. Peter Chow, Business Official DOE Grant No. DE-FG02-97ER82491 Amount: $74,195 In… More

Complementary MWIR/UV Detector Focal Plane for Enhanced Target Discrimination

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$59,897.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow
Abstract:
This proposal addresses a significant need for enhanced target discrimination by using dual wavelength focal plane for simultaneous midwave infrared (MWIR) and ultraviolet (UV) sensing. As countermeasures become more sophisticated IR imaging alone is no longer always sufficient. A dual color sensor… More

Super Low Noise High Electron Mobility Transistors And Amplifier Monolithic Integrated Circuits For Ka-Band To Millimet

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$69,678.00
Agency:
NASA
Principal Investigator:
Robert Hickman II , SENIOR DEVICE ENGINEER
Abstract:
N/a

Gallium Arsenide Static Induction Transistors For Power Switching In Cryogenic Power Management And Distribution Module

Award Year / Program / Phase:
1997 / SBIR / Phase I
Award Amount:
$69,678.00
Agency:
NASA
Principal Investigator:
Robert Hickman II , SENIOR DEVICE ENGINEER
Abstract:
N/a

Hybrid Hydrocarbon/Oxygen Sensor for Automotive Emissions Monitoring

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$74,893.00
Agency:
DOE
Principal Investigator:
Dr. Jody J. Klaassen , Senior Research Scientist
Abstract:
50538-98-I Hybrid Hydrocarbon/Oxygen Sensor for Automotive Emissions Monitoring--SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344-3677; (612) 934-2100 Dr. Jody J. Klaassen, Principal Investigator Dr. Peter P. Chow, Business Official DOE Grant No. DE-FG02-98ER82684 Amount: … More

Sharp Bandpass AlGaN p-i-n Photodiode Detectors for Ultraviolet B Irradiance Measurements

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$74,895.00
Agency:
DOE
Principal Investigator:
Dr. Jody J. Klaassen , Senior Research Scientist
Abstract:
50521-98-I Sharp Bandpass AlGaN p-i-n Photodiode Detectors for Ultraviolet B Irradiance Measurements--SVT Associates, Inc., 7620 Executive Drive, , Eden Prairie, MN 55344-3677; (612) 934-2100 Dr. Jody J. Klaassen, Principal Investigator Dr. Peter P. Chow, Business Official DOE Grant No.… More

AlGaN Solar Blind UV Focal Plane Arrays (UVFPA)

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$63,119.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James M. Van Hove
Abstract:
This proposal addresses the significant need for high power and high temperature transistors. A major innovation is needed to produce power devices which can operate at high temperatures (400 ¿C), withstand high voltages (> 500 V) and operate at high current levels without special cooling. SVT… More

AIGaN Ultraviolet Light Emitting Diodes for Fiber Optic Sensors

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$74,894.00
Agency:
DOE
Principal Investigator:
Dr. Jody J. Klassen , Senior Research Scientist
Abstract:
50371-98-I AIGaN Ultraviolet Light Emitting Diodes for Fiber Optic Sensors--SVT Associates, Inc., 7620 Executive Drive, Eden Prairie, MN 55344-3677; (612) 934-2100 Dr. Jody J. Klassen, Principal Investigator Dr. Peter P. Chow, Business Official DOE Grant No. DE-FG02-98ER82685 Amount: … More

SBIR Phase I: High Performance Thermal Imaging for Nondestructive Testing

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$99,893.00
Agency:
NSF
Principal Investigator:
Peter Chow
Abstract:
N/a

INTEGRATED SUBMILLIMETER-WAVE RECEIVERS UTILIZING RESONANT TUNNEL DIODES

Award Year / Program / Phase:
1998 / SBIR / Phase II
Award Amount:
$599,540.00
Agency:
NASA
Principal Investigator:
Mark F. Sweeny , Senior Staff Scientist
Abstract:
N/a

Miniature, Semiconductor, Sharp Bandpass Detector for Biological Fluorescence Detection

Award Year / Program / Phase:
1998 / SBIR / Phase I
Award Amount:
$69,660.00
Agency:
NASA
Principal Investigator:
Abstract:
N/a

N/A

Award Year / Program / Phase:
1999 / SBIR / Phase II
Award Amount:
$749,966.00
Agency:
DOE
Principal Investigator:
Dr Jody J Klaassen , Senior Research Scientist
Abstract:
N/a

Quasi-Self-Assembled Si-Based Light Emitter for Optical Computing

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$64,482.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow
Abstract:
N/a

Gallium Indium Antimonide - Indium Arsenide Superlattices for Long Wavelength Infrared Detection

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$99,296.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter Chow
Abstract:
N/a

Nitride Semiconductors for High Power Microwave Electronics

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$64,462.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James Michael Van Hove
Abstract:
N/a

Nitride-Based Heterojunction Bipolar Transistors

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Robert Hickman
Abstract:
N/a

Indium Gallium Arsenide Antimonide Quantum Dot Infrared Detectors

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$63,470.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy
Abstract:
N/a

High Power Switching Transistors

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$100,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Robert Hickman II
Abstract:
N/a

UV Dual-band Photodiode Sensors for Dynamic Combustion Control

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$69,659.00
Agency:
NASA
Principal Investigator:
Jody J. Klaassen, Senior Research Scientist
Abstract:
N/a

HIGHLY EFFICIENT CRYOGENIC DC-DC CONVERTERS FOR DEEP SPACE POWER SYSTEMS

Award Year / Program / Phase:
1999 / SBIR / Phase I
Award Amount:
$69,981.00
Agency:
NASA
Principal Investigator:
Robert Hickman II, Senior Device Engineer
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$69,906.00
Agency:
NASA
Principal Investigator:
James M. Hove, MBE Lab Manager
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$99,275.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter Chow, General Manager
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$64,264.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy, Senior Research Scientist
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$64,519.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Gregory Whaley, Principal Engineer
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$64,946.00
Agency / Branch:
DOD / MDA
Principal Investigator:
James M. Van Hove, MBE Lab Manager
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$64,851.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Gregory Whaley, Princial Engineer
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$64,850.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter P. Chow, General Manager
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / STTR / Phase I
Award Amount:
$64,850.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Bruce Wessels, President
Research Institution:
NORTHWESTERN UNIV.
RI Contact:
Bruce Wessels
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$99,998.00
Agency:
NSF
Principal Investigator:
James Van Hove
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$99,990.00
Agency:
NSF
Principal Investigator:
Jody Klaassen
Abstract:
N/a

Convertor for Economic Power Generation from Adjustable Speed Wind Mills

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$99,695.00
Agency:
DOE
Principal Investigator:
Aaron Moy, Senior Research Scientist
Abstract:
65706 Negative-electron-affinity (NEA) photocathodes, which produce polarized electrons, are a vital component of electron accelerators. For the next Linear Collider (NLC), the polarized electron beam intensity must be at least 20 times greater than that produced by strained GaAs, used in the… More

Quantum Dots with Improved Uniformity for IR Sensors

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$68,994.00
Agency:
NASA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
Quantum dot (QD) infrared photodetectors offer promise to improve performance over current bulk material technology. Namely, QD devices can have higher detectivity and reduced needs for cryogenic cooling. Current QD technology has yet to achieve theoretical goals however, mostly due to… More

High Efficiency InGaAsN Solar Cells

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$0.00
Agency:
NASA
Principal Investigator:
Dr. 1. Hove, MBE Lab Manager
Abstract:
This Phase I program addresses the need for solar cells with greater than 30% efficiency for use as power sources for satellite systems operating in air mass zero (AM0) solar radiation. SVT Associates proposes to meet this need by developing a tandem cell composed of InGaAsN (1eV), GaAs (1.4 eV) and… More

High Efficiency InGaAsN Solar Cells

Award Year / Program / Phase:
2001 / SBIR / Phase II
Award Amount:
$574,109.00
Agency:
NASA
Principal Investigator:
Dr. 1. Hove, MBE Lab Manager
Abstract:
This Phase I program addresses the need for solar cells with greater than 30% efficiency for use as power sources for satellite systems operating in air mass zero (AM0) solar radiation. SVT Associates proposes to meet this need by developing a tandem cell composed of InGaAsN (1eV), GaAs (1.4 eV) and… More

InAs/GaInSb Superlattice for Very Long Wavelength Infrared Applications

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$0.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter Chow, General Manager
Abstract:
GaInSb/InAs superlattices show great promise as materials for use in very long wavelength infrared (VLWIR) detectors. This III-V compound offers advantages over current HgCdTe technology in both anticipated performance level and ancillary support system(e.g. cryogenic cooling) costs. Due to its… More

InAs/GaInSb Superlattice for Very Long Wavelength Infrared Applications

Award Year / Program / Phase:
2001 / SBIR / Phase II
Award Amount:
$749,207.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter Chow, General Manager
Abstract:
GaInSb/InAs superlattices show great promise as materials for use in very long wavelength infrared (VLWIR) detectors. This III-V compound offers advantages over current HgCdTe technology in both anticipated performance level and ancillary support system(e.g. cryogenic cooling) costs. Due to its… More

Optimized InGaAsSb/GaAs photodiode for high speed detection

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$64,519.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow, President
Abstract:
This Small Business Innovation Research Phase I project proposes a new detector material for single mode optical fiber communication over the information highway. High performance detectors are an enabling technology for the moderate to long distanceoptical transmissions at 1300 and 1550 nm… More

Al(In)GaN/(In)GaN High Electron Mobility Transistors for Low-Noise and High-Power Applications

Award Year / Program / Phase:
2001 / STTR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Research Institution:
UNIV. OF ILLINOIS
RI Contact:
Ilesanmi Adesida
Abstract:
AlInGaN-based heterostructures have demonstrated unmatched versatility in optical and electronic applications. In particular, AlGaN/GaN high electron mobility transistors (HEMTs) are the leading candidates for realizing ultra-high frequency, low-noiseand high-power amplifiers. The addition of… More

High Speed VCSEL for 1300 nm Optical Network

Award Year / Program / Phase:
2001 / STTR / Phase I
Award Amount:
$64,996.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Research Institution:
UNIV. OF FLORIDA
RI Contact:
Fan Ren
Abstract:
Fiber optical transmission is increasingly applied to computer network, secure telecommunication systems, military aircraft, and even in missile guidance systems. 1300 nm vertical cavity surface-emitting lasers (VCSEL) are becoming a prefered technologyfor transceivers in short- and medium-haul,… More

Quantum Dots with Improved Uniformity for IR Sensors

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$0.00
Agency:
NASA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
Quantum dot (QD) infrared photodetectors offer promise to improve performance over current bulk material technology. Namely, QD devices can have higher detectivity and reduced needs for cryogenic cooling. Current QD technology has yet to achieve theoretical goals however, mostly due to… More

Quantum Dots with Improved Uniformity for IR Sensors

Award Year / Program / Phase:
2002 / SBIR / Phase II
Award Amount:
$599,980.00
Agency:
NASA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
Quantum dot (QD) infrared photodetectors offer promise to improve performance over current bulk material technology. Namely, QD devices can have higher detectivity and reduced needs for cryogenic cooling. Current QD technology has yet to achieve theoretical goals however, mostly due to… More

Improved Buffered Substrates for YBCO Coated Conductors

Award Year / Program / Phase:
2002 / SBIR / Phase II
Award Amount:
$549,994.00
Agency:
DOE
Principal Investigator:
Aaron Moy
Abstract:
65706 Negative-electron-affinity (NEA) photocathodes, which produce polarized electrons, are a vital component of electron accelerators. For the next Linear Collider (NLC), the polarized electron beam intensity must be at least 20 times greater than that produced by strained GaAs, used in… More

Improved Buffered Substrates for YBCO Coated Conductors

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$0.00
Agency:
DOE
Principal Investigator:
Aaron Moy
Abstract:
65706 Negative-electron-affinity (NEA) photocathodes, which produce polarized electrons, are a vital component of electron accelerators. For the next Linear Collider (NLC), the polarized electron beam intensity must be at least 20 times greater than that produced by strained GaAs, used in… More

Induim Arsenide Antimonide Very Long Wavelength Photodiodes for Near Room Temperature Operation

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$99,960.00
Agency:
DOE
Principal Investigator:
Abstract:
70278 Commercially available photodetectors for the 8-12 micron wavelength range, needed for the monitoring of chemical weapons, are susceptible to high degrees of noise, have low operating bandwidth, and require cryogenic cooling. This project will develop a low noise, high bandwidth… More

Indium Gallium Arsenide Nitride Quantum Dots for High Speed Infrared Emitters BMDO02-011B

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$69,760.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy, Senior Research Scientist
Abstract:
"The material Indium Gallium Arsenide Nitride (InGaAsN) is a novel compound semiconductor ideally suited for infrared optical devices. This material may be grown on GaAs substrates and can take advantage of mature GaAs processing technology. Quantum dots,a subset of the nanotechnology field, are… More

InAs/GaInSb Superlattice Detector Development for > 20-Micron Infrared Focal Plane 02-003E

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$69,975.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow, General Manager
Abstract:
InAs/GaInSb type II superlattices show great promise for use in Very Very Long Wavelength Infrared (VVLWIR, for wavelength > 20 um) detectors. System analysis indicates early detection of space borne vehicles is more easily achieved in this infraredregime. This III-V compound compares very… More

Surface Passivation of Gallium Nitride (GaN) Based Devices and Circuits to Reduce Current Slump

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$69,989.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Brian Hertog, Senior Research Scientist
Abstract:
High power AlGa-nitride RF electronics are of great interest to various DoD applications. This proposal will utilize an advanced plasma deposition process to passivate surface traps on the devices, to dramatically reduce surface-related transient effectsand improve the device performance. We will… More

Hetero-Junction Pumped Er-Light Emitter for Integrated Optical Communication 02-011A

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$69,939.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow, General Manager
Abstract:
SVT Associates proposes an enhanced GaN:Er light emitting diode fabricated on silicon substrate and can be integrated with thin film waveguide, such that light propagation can be manipulated for fast on-chip or chip-to-chip interconnect. A key component ofthe optical communication on a chip is an… More

SBIR Phase I: High Sensitivity, Tunable GaN/AlGaN Multiple Quantum Well UV Photodetectors

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$99,979.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project is directed toward the development of highly sensitive, solid-state, solar-blind photodiodes based on the group III-nitride material system, aluminum gallium nitride. Ultraviolet detectors are used in water treatment plants, automated… More

Surfactant Enhanced Growth of High Quality Gallium Nitride (GaN) on Silicon for RF Power Amplifiers

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$69,995.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Andrew Wowchak, Senior Research Scientist
Abstract:
The wide bandgap material GaN is ideally suited for high power and high temperature electronics. Potential applications include high power devices such as amplifiers, mobile digital, point-to-point and satellite communications, wireless area networking(WAN), high temperature sensor and electronics… More

High Performance VCSEL for 1550 nm Optical Network

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$69,471.00
Agency:
NASA
Principal Investigator:
Andrew Wowchak, Principal Investigator
Abstract:
Fiber optical transmission is increasingly applied to computer network, secure telecommunication systems, military aircraft, and even in missile guidance systems. 1550 nm vertical cavity surface-emitting lasers (VCSEL) are becoming a preferred technology for transceivers in long-haul, and even… More

Pressure Sensor Eletronics for High Temperature Drilling

Award Year / Program / Phase:
2002 / SBIR / Phase I
Award Amount:
$99,836.00
Agency:
DOE
Principal Investigator:
Abstract:
70291 Achieving 0.5 psi accuracy at pressures up to 10,000 psi in geothermal drilling applications will require precision pressure transducing technology. Capacitive pressure transducers would be ideal for both the high accuracy and high temperature stability requirements, but supporting… More

Low Pressure Source for Mass-Selective, Diffusion Assisted Epitaxy

Award Year / Program / Phase:
2002 / STTR / Phase I
Award Amount:
$99,994.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Amir M. Dabiran, MBE Lab Manager
Research Institution:
University of Minnesota
RI Contact:
Philip I. Cohen
Abstract:
Dramatic differences in the diffusivities of the constituents of novel thin film materials and structures limit material perfection under far from equilibrium growth conditions. We will develop a new light-mass ion source, compatible with the low pressurerequirements of molecular beam epitaxy… More

Large Area Si Substrates for InP Based Electronics and Optical Device Manufacturing

Award Year / Program / Phase:
2002 / STTR / Phase I
Award Amount:
$69,945.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow, General Manager
Research Institution:
Northwestern University
RI Contact:
Susan G. Ross
Abstract:
InP-based devices have applications encompassing the entire communication technology including wireless and fiber-optic telecommunications. It is especially suitable for very high frequency (up to 200GHz) operation. Therefore they are increasingly acritical component in all military missions. Their… More

Organic Field Effect Transistors for Large Format Electronics

Award Year / Program / Phase:
2002 / STTR / Phase I
Award Amount:
$69,900.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Andrew Wowchak, Senior Research Scientist
Research Institution:
University of Minnesota
RI Contact:
P. Paul Ruden
Abstract:
Organic field effect transistors (OFETs) are gaining rapid attention for their vast technical and commercial potential. Their low cost, low-temperature processing, and compatibility with flexible substrates are key attributes and are especially suitablefor large format electronics manufacturing.… More

Induim Arsenide Antimonide Very Long Wavelength Photodiodes for Near-Room-Temperature Operation

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$0.00
Agency:
DOE
Principal Investigator:
Abstract:
70278S02-II Commercially available photodetectors that operate in the 3-12 micron wavelength range are needed for the Long Wave Infrared (LWIR) monitoring of chemical weapons. However, these photodetectors are susceptible to high degrees of noise, have a low operating bandwidth, and require… More

Induim Arsenide Antimonide Very Long Wavelength Photodiodes for Near-Room-Temperature Operation

Award Year / Program / Phase:
2003 / SBIR / Phase II
Award Amount:
$499,934.00
Agency:
DOE
Principal Investigator:
Abstract:
70278S02-II Commercially available photodetectors that operate in the 3-12 micron wavelength range are needed for the Long Wave Infrared (LWIR) monitoring of chemical weapons. However, these photodetectors are susceptible to high degrees of noise, have a low operating bandwidth, and require… More

Pressure Sensor Electronics for High Temperature Drilling

Award Year / Program / Phase:
2003 / SBIR / Phase II
Award Amount:
$549,936.00
Agency:
DOE
Principal Investigator:
Abstract:
70291S02-II This project will demonstrate and produce a greatly improved monolithic differential amplifier and switch, based on AlGaN/GaN High Electron Mobility Transistors (HEMTs) and passive components, that will be capable of operating in the high-temperature oil drilling environment. The… More

Pressure Sensor Electronics for High Temperature Drilling

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$0.00
Agency:
DOE
Principal Investigator:
Abstract:
70291S02-II This project will demonstrate and produce a greatly improved monolithic differential amplifier and switch, based on AlGaN/GaN High Electron Mobility Transistors (HEMTs) and passive components, that will be capable of operating in the high-temperature oil drilling environment. The… More

Novel P-Type Al(In)GaN Superlattice Structures for High-Performance Bipolar Transistors.

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$69,993.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Amir M. Dabiran, MBE Lab Manager
Abstract:
For ultra-high power, high temperature electronics, III-N wide-bandgap materials offer substantial advantages over other semiconductor material systems. Remarkable power densities have been achieved in AlGaN-based high electron mobility transistors(HEMTs) for operation at high frequencies. Even… More

Passivation of InAs/GaInSb Superlattices for Improved VLWIR Focal Plane Performance

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$69,967.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Brian Hertog, Senior Research Scientist
Abstract:
High performance InAsGaInSb superlattice detectors are of great interest to the DoD for various DoD applications and, in particular, detection of space borne objects. They are capable of infrared detection from 2 to >30 mm. This proposal will utilize anadvanced plasma deposition process to passivate… More

Improved Thermal Management by High Growth Rate Diamond Layers

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$69,989.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Daming Li, Senior Research Scientist
Abstract:
This Phase I project addresses the development of a process for the thermal management of semiconductor devices with diamond films grown by hot filament chemical vapor deposition (HFCVD). Thermal management of electronic and optical devices is one of themost critical areas for high power… More

SBIR Phase I: Gallium Antimonide (GaSb) for High Speed Infrared Photodetectors

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$98,857.00
Agency:
NSF
Principal Investigator:
Aaron Moy
Abstract:
This Small Business Innovation Research (SBIR) Phase I project proposes to create a new, high performance photodetector operating in the near/mid-infrared spectrum. Gallium antimonide (GaSb) will be used to create avalanche photodiodes (APDs) sensitive to wavelengths < 1.7 micron. The GaSb material… More

SBIR Phase I: Novel AlGaN-based Structures for High-Efficiency and High-Power, Deep Ultraviolet Emitters

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$99,989.00
Agency:
NSF
Principal Investigator:
Amir Dabiran
Abstract:
`This Small Business Innovation Research Phase I project is directed toward the development of a nitride-based semiconductor laser operating at 280 nm or shorter. In Phase I, high-efficiency and high power ultraviolet light emitting diodes (UV LED), incorporating novel AlGaN quantum-well (QW)… More

High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$69,939.00
Agency:
NASA
Principal Investigator:
Amir Dabiran, Principal Investigator
Abstract:
One of the main issues for III-nitride growth is the lack of a suitable native substrate. Growth on foreign substrates such as sapphire or SiC results in nitride material with a high density of defects due to large mismatches in lattice constant and thermal expansion. Nonetheless, nitride devices… More

Al(In)GaN-Based, High-Electron Mobility Transistors (HEMTs) on SiC for High-Power Radar Applications

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$99,997.00
Agency:
DOE
Principal Investigator:
Abstract:
73017S03-I Substantial improvements in high-power performance are predicted for high-frequency Al(In)GaN-based HEMTs on SiC substrates, which are components of Synthetic Aperture Radar systems used in national security applications. The two main issues are the growth of high-quality, insulating… More

Dual Wavelength Infrared Detector for VLWIR Applications

Award Year / Program / Phase:
2003 / SBIR / Phase I
Award Amount:
$69,995.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow, General Manger
Abstract:
High performance very long wavelength infrared (VLWIR) detectors play a critical role in the early detection of long range missiles. However, a single spectral wavelength (color) detector may be inadequate due to target spectral complexity and backgroundinterference. A multi-spectral focal plane… More

Large Area Si Substrates for InP Based Electronics and Optical Device Manufacturing

Award Year / Program / Phase:
2004 / STTR / Phase II
Award Amount:
$499,955.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Peter Chow, General Manager
Research Institution:
Northwestern University
RI Contact:
Susan Ross
Abstract:
InP-based devices have applications encompassing the entire communication technology including wireless and fiber-optic telecommunications. It is especially suitable for very high frequency (up to 200GHz) operation. Therefore they are increasingly a critical component in all military missions. Their… More

Low Pressure Source for Mass-Selective, Diffusion Assisted Epitaxy

Award Year / Program / Phase:
2004 / STTR / Phase II
Award Amount:
$499,999.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Amir M. Dabiran, MBE Lab Manager
Research Institution:
University of Minnesota
RI Contact:
Philip I. Cohen
Abstract:
Epitaxial growth of non-equilibrium thin-film structures, which have high quality and abrupt interfaces, is still the main challenge that limits many material systems for applications in semiconductor devices. In this STTR Phase II program, SVT Associates (SVTA) in collaboration with the University… More

High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

Award Year / Program / Phase:
2004 / SBIR / Phase II
Award Amount:
$599,997.00
Agency:
NASA
Principal Investigator:
Am Dabiran, Principal Investigator
Abstract:
Electronics circuits that can function in very high temperatures (> 450?C) are needed for a number of applications including automotive and turbine engine control, industrial high-temperature processing, geothermal and deep-well oil drilling, satellite power management systems, and future planetary… More

Novel MgZnO-based spintronic materials and devices.

Award Year / Program / Phase:
2004 / STTR / Phase I
Award Amount:
$99,990.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Andrei Osinsky, Principle Device Scientist
Research Institution:
UNIV. OF FLORIDA
RI Contact:
Stephen Pearton
Abstract:
This Phase I STTR project addresses the development of novel Zinc Oxide-based spintronic devices. The spintronic devices will find widespread application in civilian and military markets offering new generation of transistors, lasers and integrated magnetic sensors. The objective of the Phase I… More

Low-Noise Avalanche Photodiodes for Mid-IR Applications

Award Year / Program / Phase:
2004 / STTR / Phase I
Award Amount:
$99,843.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Aaron Moy, Senior Research Engineer
Research Institution:
Columbia University
RI Contact:
Wen I. Wang
Abstract:
Avalanche photodiodes (APDs) are the detector of choice for low noise, high speed, high sensitivity photodetectors. Applications in the mid-IR (3-5 micron) include optical trace gas detection, LADAR, quantum cryptography and targeting countermeasures. Currently there are no commercially available… More

Development of III-V Terahertz Quantum Cascade Lasers

Award Year / Program / Phase:
2004 / STTR / Phase I
Award Amount:
$99,969.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Amir Dabiran, MBE Laboratory Manager
Research Institution:
UNIV. OF NORTH CAROLINA-CHARLOTTE
RI Contact:
Raphael Tsu
Abstract:
The purpose of this Phase I study is to develop quantum cascade laser (QCL) with terahertz (THz) emission. Terahertz photons have energies which lie in the regime between optical photons and high frequency radio waves and have many important commercial and military applications. In the QCL, quantum… More

Sensitive GaN-based Chemical and Biological Detectors for Monitoring of Water Supplies

Award Year / Program / Phase:
2004 / SBIR / Phase I
Award Amount:
$69,994.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrew Wowchak, Senior Research Scientist
Abstract:
Effective monitoring is critical in protecting populations against the dangers of accidental or intentional contamination of water supplies. For both civilian and military operations, fast-acting remote sensors are needed that can detect a range of possible biological and chemical substances, below… More

Phased Array Antennas on Large Area Substrates

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$69,788.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, Manager of Device Development
Abstract:
In the Phase I program an inovative approach to modeling and fabrication of integrated phase array antennas is proposed. The approach uses advantages of implementing scientific modeling and simulation on EM Premier workstation which enables a full 3D FDTD algorithm.The feasibility of integration of… More

Highly Polarized Photocathodes Via Minimization of Spin Relaxation

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$99,994.00
Agency:
DOE
Principal Investigator:
Abstract:
79431S Negative-electron-affinity (NEA) photocathodes, which produce polarized electrons, are a vital component of electron accelerators. The Next Linear Collider (NLC) will require a polarized electron beam intensity at least 20 times greater than that which can be produced with strained GaAs,… More

High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Year / Program / Phase:
2005 / STTR / Phase I
Award Amount:
$99,922.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Amir Dabiran, MBE Laboratory Manager
Research Institution:
UNIV. OF ILLINOIS, URBANA-CHAM
RI Contact:
Ilesanmi Adesida
Abstract:
A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement… More

Advanced Fabrication Techniques for Type-II Superlattice VLWIR Detectors

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$99,933.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Brian Hertog, Senior Engineer
Abstract:
The growth and fabrication of nanostructures, particularly short period Type-II superlattices, rely on high quality crystalline materials. Defects and non-planarities on the substrate surface and non-uniformities in the epitaxial layers can impair device performance. Gallium antimonide (GaSb)… More

ZnO Based Light Emitters for UV/Blue Applications

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$119,754.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, Manager of Device Development
Abstract:
This Phase I SBIR project addresses the development of novel solid state Zinc Oxide-based light emitting device. These devices will find widespread application in civilian and military markets. The objective of the Phase I effort is to explore CdZnO/ZnO material system for UV emitters. SVT… More

ZnO Based Light Emitters for UV/Blue Applications

Award Year / Program / Phase:
2005 / SBIR / Phase II
Award Amount:
$729,689.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, Manager of Device Develop
Abstract:
This Phase II SBIR project addresses the development of novel solid state Zinc Oxide-based light emitting device. These devices will find widespread application in civilian and military markets. The objective of the Phase II is to develop UV/Blue emitters using the CdZnO/ZnO material system. SVT… More

AlInGaN-based Transistors for Advanced Applications

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$119,784.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, Manager of Device Development
Abstract:
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and… More

Passivation of InAs/GaInSb Superlattices for Improved VLWIR Focal Plane Performance

Award Year / Program / Phase:
2006 / SBIR / Phase II
Award Amount:
$500,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Brian Hertog, Senior Research Scientist
Abstract:
This Phase II program proposes a unique passivation process for infrared focal plane arrays. It entails the re-growth of isolating structures on the processed array that will passivate surface traps, leading to dramatically reduced surface-related transient effects and improved device performance.… More

High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Year / Program / Phase:
2006 / STTR / Phase II
Award Amount:
$749,998.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Amir Dabiran, MBE Laboratory Manager
Research Institution:
UNIV. OF ILLINOIS, URBANA-CHAM
RI Contact:
Ilesanmi Adesida
Abstract:
This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)

AlInGaN-based Transistors for Advanced Applications

Award Year / Program / Phase:
2006 / SBIR / Phase II
Award Amount:
$728,079.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Andrei Osinsky, Manager of Device Develop
Abstract:
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication and other advanced applications. Still, there remain performance and reproducibility… More

Improvement of Type II Superlattices by H-Plasma

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,959.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
SVT Associates proposes an innovative atomic Hydrogen enhanced growth and surface preparation technique for high performance Type-II superlattice focal plane array fabrication. This material system is capable of infrared detection from 2 to > 30 micron, depending on layer composition and thickness. … More

High-Performance Type II Superlattice LWIR Detector on Si

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$69,773.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
SVT Associates proposes an innovative application of several technologies to create device quality large diameter GaSb virtual substrates on Si. In combination with this GaSb/Si substrate, a novel arsenic isolation apparatus will be applied to Type-II superlattice (SL) growth for LWIR detector… More

Pulsed Single Frequency MOPA Laser

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$66,464.00
Agency:
NASA
Principal Investigator:
Sergey Zaytsev, Principal Investigator
Abstract:
Latest advances in semiconductor optoelectronics makes it possible to develop compact light weight robust sources of coherent optical pulses, demanded for numerous applications such as lidars. Recent improvements in heterostructure growth and processing technology, as well as new approaches in… More

Next Generation Solar Cells Based on Nanostructures

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,741.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
Increased power demands on satellites and remote instruments drive the need for achieving higher conversion efficiencies from solar cells with less weight and volume. Of great current interest is the ability to create nanoscale structures, with device properties that can be uniquely engineered. … More

Advanced Fabrication Techniques for High Yield GaAsP Photocathodes

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$78,872.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Dr.Peter Chow, General Manager
Abstract:
This Phase I effort seeks to improve the yield and quantum efficiency of GaAsP photocathodes by improved growth process and post-growth fabrication steps

High-Sensitivity Semiconductor Photocathodes for Space-Born UV Photon-Counting and Imaging

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$69,791.00
Agency:
NASA
Principal Investigator:
Amir Dabiran, Principal Investigator
Abstract:
Many UV photon-counting and imaging applications, including space-borne astronomy, missile tracking and guidance, UV spectroscopy for chemical/biological identification, and UV medical imaging, demand very high performance in detector sensitivity, speed, resolution, and background noise. This… More

SBIR Phase I: Novel Encapsulation Process for Organic Light Emitting Diodes

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,912.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I project proposes a novel method to encapsulate organic light emitting diodes (OLEDs). Compared with the inorganic counterparts, OLEDs have the advantages of low-cost, large-area, small footprint, flexible usage, and low-temperature processing. However,… More

A New Method to Improve the Performance of Hydrogen Selective Silica Membranes

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,981.00
Agency:
DOE
Principal Investigator:
Abstract:
High-performance, molecular sieve membranes are sought by DOE to separate hydrogen from other gases (mainly carbon diode) in coal gasification processes. However, because of defects, the selectivity of crystalline, silicate-based, molecular sieve membranes can be compromised. This project will… More

Robust GaN-Based Photocathodes for High-Efficiency Polarized RF Electron Guns

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,989.00
Agency:
DOE
Principal Investigator:
Abstract:
Compared to DC electron guns, the significantly-higher field gradients that are possible with an radio frequency (RF) gun would allow short pulse generation, which would make an RF buncher unnecessary. This in turn would allow for a much simpler injector design in high-energy beam facilities, such… More

SBIR Phase I: High Efficiency, Wide-Bandgap Photocathodes for Solar-Blind UV Photon Counting and Imaging

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,997.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research (SBIR) Phase I project is directed toward the development of innovative high-efficiency UV photocathodes based on the wide bandgap III-nitride semiconductors. Photocathodes based on AlxGa1-xN alloy with a bandgap of 3.4 to 6.2 eV (for Al composition x from 0… More

SBIR Phase I: A Self-Limited Method to Improve the Gas Selectivity of Zeolite Microporous Membranes

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,757.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I project proposes a self-limited method to repair defects in c-oriented zeolite molecular sieve membranes. In this project, we will use a self-limited catalyzed low temperature method to grow silicate coatings inside the defective membrane regions. The… More

Large Area, Robust GaN-Based Photocathodes for High-Efficiency UV and Cherenkov Light Detection

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,942.00
Agency:
DOE
Principal Investigator:
Abstract:
Improved, high-sensitivity, large-area UV detectors are sought for many photon-counting and imaging applications. In particular, for nuclear and high energy physics research, there is a need to extend the sensitivity of photon detectors to the blue and UV wavebands. In addition, the photocathodes… More

SBIR Phase I: Enhanced P-Type Doping of ZnO by Band Gap Engineering

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,966.00
Agency:
NSF
Principal Investigator:
Abstract:
This Small Business Innovation Research Phase I project addresses the development of solid state ultraviolet/blue light emitting diode (LED) using novel approaches for ptype doping of ZnO. The proposed concepts offer a solution to current p-type doping problem, which is the main obstacle in the… More

Cost Effective Manufacturing of Device Quality Large Diameter InSb

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$99,741.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Peter Chow, General Manager
Abstract:
SVT Associates proposes an innovative ion-beam, atomic Hydrogen and off-axis substrate techniques for device quality large diameter InSb for 3-5 um IR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in… More

Advanced MWIR/LWIR Multi-Spectral Detectors

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$99,030.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
Hyperspectral imaging arrays offer far more data and the ability to discriminate objects being observed. Continued difficulties with applying HgCdTe materials, especially for LWIR, present an opportunity for the development of alternate materials. One such candidate for MWIR/LWIR photodetectors are… More

High Efficiency Multi-Junction Photovoltaics on Silicon Substrates

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$97,396.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Peter Chow, President
Abstract:
SVT Associates proposes a 6-month Phase I investigation to create high efficiency photovoltaic cells on silicon substrates through the use of multiple junction absorbing layers. The key technology to be investigated is the epitaxial growth of compound semiconductor on Si. Si substrates are favored… More

High Polarization and High Peak Current Compositionally Graded AlGaAs/GaAs Superlattice Photocathodes for RF Gun Applications

Award Year / Program / Phase:
2007 / STTR / Phase I
Award Amount:
$99,819.00
Agency:
DOE
Principal Investigator:
Research Institution:
Stanford Linear Accelerator Center
RI Contact:
James Simpson
Abstract:
Negative-electron-affinity (NEA) photocathodes, which produce polarized electrons, are a vital component of current electron accelerators. However, future systems, such as the International Linear Collider (ILC), will require significant upgrades to these photocathodes. For example, the polarized… More

High Polarization and High Robustness Antimonide Based Superlattice Photocathodes for RF Gun Applications

Award Year / Program / Phase:
2007 / STTR / Phase I
Award Amount:
$99,933.00
Agency:
DOE
Principal Investigator:
Research Institution:
Stanford Linear Accelerator Center
RI Contact:
James E. Simpson
Abstract:
Negative-electron-affinity photocathodes, which produce polarized electrons, are a vital component of electron accelerators such as that at the Stanford Linear Accelerator Center. Future systems, such as the International Linear Collider, will require a polarized electron beam intensity at least 20… More

Biodegradable Long Shelf Life Food Packaging Material

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$99,934.00
Agency:
NASA
Principal Investigator:
Jianwei S. Dong, Principal Investigator
Abstract:
Long shelf life food packaging is a critical to maintaining the crew's well being in NASA's manned missions to the mars. Not only does the packaging have to offer an effective means to preserve the food's nutrition and flavor over a long period of time, but the packaging material itself should be… More

High Performance Dual Band Photodetector Arrays for MWIR/LWIR Imaging

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$99,484.00
Agency:
NASA
Principal Investigator:
Yiqiao P. Chen, Principal Investigator
Abstract:
Hyperspectral imaging arrays offer far more data and the ability to discriminate objects being observed. Continued difficulties with applying HgCdTe materials, especially for LWIR, present an opportunity for the development of alternate materials. One such candidate for MWIR/LWIR photodetectors are… More

Large Area, Robust GaN-Based Photocathodes for High-Efficiency UV and Cherenkov Light Detection

Award Year / Program / Phase:
2007 / SBIR / Phase II
Award Amount:
$748,796.00
Agency:
DOE
Principal Investigator:
Abstract:
For most commercial applications ¿ such as flame and arc sensing, air and water purification, and combustion monitoring ¿ the requirements for ultraviolet (UV) light detection are adequately provided by commercially available GaN-based photodiodes. However, many UV photon-counting and imaging… More

Improvement of Type II Superlattices by H-Plasma

Award Year / Program / Phase:
2007 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
SVT Associates proposes an innovative atomic Hydrogen enhanced growth and surface preparation technique for high performance type-II superlattice focal plane array fabrication. This material system is capable of infrared detection from 2 to > 30 micron, depending on layer composition and thickness. … More

Advanced Coating Technology for Enhanced Performance of Microchannel Plates for UV Detectors

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,916.00
Agency:
NASA
Principal Investigator:
Feng Niu, Principal Investigator
Abstract:
In this NASA SBIR Phase I proposal we propose to apply a highly conformal coating of ZnO and AlN or a double layer of GaN to the surface and internal pore walls of conventional microchannel plates (MCP). This will lead to enhanced secondary electron emission (SEE) and, thus, improve MCP gain for UV… More

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,999.00
Agency:
NASA
Principal Investigator:
Bentao Cui, Principal Investigator
Abstract:
High quality GaN epitaxial films are key to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact, solid state lighting, high-temperature and high-power electronics, microelectronic and mechanical sensors, and high-efficiency solar… More

High-Performance Type II Superlattice LWIR Detector on Six Inch (6") Si

Award Year / Program / Phase:
2008 / SBIR / Phase II
Award Amount:
$773,407.00
Agency / Branch:
DOD / ARMY
Principal Investigator:
Aaron Moy, Senior Research Engineer
Abstract:
SVT Associates proposes an innovative 24-month Phase II program to further develop high performance Type-II superlattice focal plane arrays on Silicon substrates up to 6-inches in diameter. The Type-II superlattice material system is capable of infrared detection from 2 to > 30 micron, depending on… More

High Performance Dual Band Photodetector Arrays for MWIR/LWIR Imaging

Award Year / Program / Phase:
2008 / SBIR / Phase II
Award Amount:
$599,371.00
Agency:
NASA
Principal Investigator:
Yiqiao Chen, Principal Investigator
Abstract:
This proposed Phase II program seeks to create dual-band pixel-collocated MWIR/LWIR photodetector arrays based on III-V semiconductor materials in a Type-II superlattice structure. The Type-II superlattice offers a customizable cutoff wavelength while maintaining a lattice-matched condition to the… More

Integrated Production of Ultra-Low Defect GaN Films and Devices for High-Power Amplifiers

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$599,970.00
Agency:
NASA
Principal Investigator:
Bentao Cui, Principal Investigator
Abstract:
High quality GaN epitaxial films are one of the keys to current efforts for development of both high-power/high-speed electronic devices and optoelectronic devices. In fact, solid state lighting, high-temperature and high-power electronics, microelectronic and mechanical sensors, and high-efficiency… More

STTR Phase I: Epitaxial nanostructured AlGaN for high efficiency UV emitters

Award Year / Program / Phase:
2009 / STTR / Phase I
Award Amount:
$149,122.00
Agency:
NSF
Principal Investigator:
Research Institution:
University of Central Florida
RI Contact:
Winston Schoenfeld
Abstract:
This Small Business Technology Transfer Research Phase I project is directed toward the development of a high-efficiency and high-power AlGaN-based semiconductor light emitting diode (LED), operating at 300nm or shorter, for a wide range of applications including air and water purification, polymer… More

GaN-Based, Low-Voltage Avalanche Photodiodes for Robust and Compact UV Imagers

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,972.00
Agency:
NASA
Principal Investigator:
Amir M. Dabiran, Principal Investigator
Abstract:
This Phase I SBIR program is directed toward the development of a novel low-voltage (~10V) AlGaN-based multi-quantum well (MQW) avalanche photodiode (APD) on low-cost substrates. The high-gain, high-speed and low-noise operation of the proposed device allow the replacement of bulkier and more… More

Advanced Coating Technology for Enhanced Performance of Microchannel Plates for High-efficiency UV and Cherenkov Light Detection

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,822.00
Agency:
DOE
Principal Investigator:
Abstract:
Nuclear physics research has a need to develop inexpensive, position-sensitive, large-sized photon detection devices for Cherenkov counters. A UV photon detector is an essential part of Cherenkov counters. Currently, microchannel plate (MCP) detectors are used extensively in UV instruments. MCPs… More

High-Detectivity Very-Long-Wavelength Strain-Compensated Type II Superlattice Infrared Photo Detectors

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,826.00
Agency:
DOE
Principal Investigator:
Abstract:
Very-long-wavelength infrared (VLWIR) photo detectors are needed for infrared-based chemical identification and terrestrial mapping applications associated with the detection of weapons of mass destruction. This project will develop a material system for a high-performance type-II VLWIR photo… More

Robust GaN-Based Photocathodes for High-Current RF Electron Injectors

Award Year / Program / Phase:
2009 / SBIR / Phase I
Award Amount:
$99,910.00
Agency:
DOE
Principal Investigator:
Abstract:
Photocathodes play a key role in the electron injectors used at DOE accelerator facilities. Metallic photocathodes are very robust, have long lifetimes, and provide the convenience of air transportability. The main disadvantage of these cathodes is their very low quantum efficiency (QE). On the… More

Highly Efficient InGaN-Based Solar Cells for High Intensity and High Temperature Operation

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$99,984.00
Agency:
NASA
Principal Investigator:
Amir Dabiran, Principal Investigator
Abstract:
In this SBIR Phase I program, we propose to fabricate high-efficiency and radiation hard solar cells based on InGaN material system that can cover the whole solar spectrum by adjusting the alloy composition. The main program objectives include the fabrication of InGaN-based solar cells on large… More

Ultra-thin AlN/GaN Heterostructures for Robust, Radiation-hard Electronics

Award Year / Program / Phase:
2010 / SBIR / Phase I
Award Amount:
$99,976.00
Agency:
DOE
Principal Investigator:
Abstract:
Exposure to high energy radiation can produces disruptive transient behavior as well as long-term changes in electronic device and circuit characteristics. Depending on both the material properties and radiation characteristics, these effects may result in parametric degradation or functional… More

Robust GaN-Based Photocathodes for High-Current RF Electron Injectors

Award Year / Program / Phase:
2010 / SBIR / Phase II
Award Amount:
$999,398.00
Agency:
DOE
Principal Investigator:
Abstract:
Advanced electron injectors are based on photocathode electron guns. These guns can produces electron beams with short pulses and high brightness. High efficiency photo-injectors are the electron source of choice for future linear accelerators (linacs) and colliders, energy recovery linear… More

Uncooled High-Performance InAsSb Focal Plane Arrays

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,688.00
Agency:
NASA
Principal Investigator:
Yiqiao Chen, Principal Investigator
Abstract:
SVT Associates proposes an innovative digital alloy technique to extend the cutoff wavelength of InAsSb beyond 5 um, a wider band gap InAlAsSb layer inserted into depletion region to suppress dark current, and atomic layer deposition technique to coat radiation-hard material AlN on InAsSb detectors… More

High-Efficiency GaN-Based UV Imaging Photocathodes for Application in Harsh Environments

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,948.00
Agency:
NASA
Principal Investigator:
Andrew Wowchak, Principal Investigator
Abstract:
This proposal is directed toward the development of innovative high-efficiency UV photocathodes based on the wide bandgap III-nitride semiconductors for reliable operation at high temperature and high radiation environments for future NASA missions near the Sun and in deep atmospheres of Venus and… More

High-Detectivity VLWIR Type-II Superlattice Infrared Photo Detectors

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$150,000.00
Agency:
DOE
Principal Investigator:
Yiquao Chen, Dr. – 952-934-2100
Abstract:
Current technology for detecting long wavelength and very long wavelength infrared light, such as mercury cadmium telluride-based sensors, suffers from deleterious characteristics such as high noise and high cost. Creating detectors that operate in this wavelength range that reduce noise and cost… More

Enhanced Quantum Efficiency of Photocathodes with Polarized Emission

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$149,565.00
Agency:
DOE
Principal Investigator:
Aaron Moy, Dr. – 952-934-2100
Abstract:
The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at the Stanford Linear Accelerator Center (SLAC), which is used in the current generation of photocathodes. Quantum efficiencies thus far are on the order… More

High-Detectivity Type-II Superlattice Detectors for 6-14 um Infrared Applications

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$124,859.00
Agency:
NASA
Principal Investigator:
Yiqiao Chen, Principal Investigator
Abstract:
SVT Associates proposes an novel type II superlattice structure to extend the cutoff wavelength and CBIRD SL photo diode structure with unipolar barriers to suppress dark current of SL detectors grown on GaSb substrate. This InAs/GaSb superlattice material system is capable of infrared detection in… More

Monolithically integrated AlN/GaN electronics for harsh environments

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$96,891.00
Agency:
NASA
Principal Investigator:
David Deen, Principal Investigator
Abstract:
Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable… More

Enhanced Quantum Efficiency of Photocathodes with Polarized Emission

Award Year / Program / Phase:
2012 / SBIR / Phase II
Award Amount:
$1,000,000.00
Agency:
DOE
Principal Investigator:
Aaron Moy, Dr. – 952-934-2100
Abstract:
Photocathodes with spin-polarized electron emission are used in physics research. Current photocathodes offer high polarization, but low total currents, and have limited lifetime. Research involving these polarized electrons would be more productive if a higher electron current were provided. This… More

Large Area GaN-Based Avalanche Photodiodes for Operation in Extreme Environments

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$149,956.00
Agency:
DOE
Principal Investigator:
Amir Dabiran, Dr. – 952-934-2100
Abstract:
For several decades photomultiplier tubes (PMTs) have been the main technology for sensitive and low noise detection of photons in many high energy physics experiments. However, compared to solid-state photodetectors, PMTs are bulky, fragile, expensive, and need to be shielded from high magnetic… More

GaAsSb/AlGaAs Superlattice High-Polarization Electron Source

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$149,878.00
Agency:
DOE
Principal Investigator:
Yiqiao Chen, Dr. – 952/934-2100 e
Abstract:
The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at the Stanford Linear Accelerator Center (SLAC). Future systems, such as the International Linear Collider (ILC), will require a polarized electron beam… More

GaAsSb/AlGaAsP Superlattice Polarized Electron Source

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$149,988.00
Agency:
DOE
Principal Investigator:
Abstract:
The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at the Stanford Linear Accelerator Center (SLAC) and DoE Jefferson Lab. Future systems, such as the International Linear Collider (ILC), will require a… More

GaAsSb/AlGaAs Superlattice High-Polarization Electron Source

Award Year / Program / Phase:
2013 / SBIR / Phase II
Award Amount:
$999,924.00
Agency:
DOE
Principal Investigator:
Abstract:
The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at DoE Jefferson Lab and the Stanford Linear Accelerator Center (SLAC). Future systems, such as the International Linear Collider (ILC), will require a… More

Plasmonic Enhanced Type-II Superlattice Focal Plane Arrays

Award Year / Program / Phase:
2013 / SBIR / Phase I
Award Amount:
$124,884.00
Agency:
NASA
Principal Investigator:
Wentao Lu, Principle Investigator
Abstract:
SVT Associates proposes an novel type II superlattice structure to extend the cutoff wavelength and CBIRD SL photo diode structure with unipolar barriers to suppress dark current of SL detectors grown on GaSb substrate. This InAs/GaSb superlattice material system is capable of infrared detection in… More

GaAsSb/AlGaAsP Superlattice Polarized Electron Source

Award Year / Program / Phase:
2014 / SBIR / Phase II
Award Amount:
$999,810.20
Agency:
DOE
Principal Investigator:
Yiqiao Chen, Dr. – (952) 934-2100
Abstract:
The negative-electron-affinity (NEA) photocathodes which produce polarized electrons are a vital component of electron accelerators such as that at DoE Jefferson Lab and the Stanford Linear Accelerator Center (SLAC). Future systems, such as the International Linear Collider (ILC), will require a… More

Efficient EMI/RFI attenuation by GaN-based coating on spinel windows

Award Year / Program / Phase:
2014 / SBIR / Phase I
Award Amount:
$79,925.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Boris Borisov, MBE Laboratory Manager – (952) 934-2100
Abstract:
With the advent of electromagnetic and electro-optical sensors in modern military platforms, the issue of detectability extends well beyond that of visible light. The suppression of Electromagnetic Interference/Radio Frequency Interference (EMI/RFI) is considered as one of vital elements of… More