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IN(X)GA(1-X)N GROWTH BY ION BEAM EPITAXY FOR VISIBLE AND UV LIGHT EMITTERS

Award Information

Agency:
Department of Defense 		Branch:
Missile Defense Agency 		Award ID:
25567 		Program Year/Program:
1994 / SBIR
Agency Tracking Number:
25567 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
SVT Associates
7620 Executive Drive Eden Prairie, MN 55344-3677
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Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: IN(X)GA(1-X)N GROWTH BY ION BEAM EPITAXY FOR VISIBLE AND UV LIGHT EMITTERS
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $59,980.00
 

Abstract:

A significant need exists for solid state blue and UV light emitters. These wavelengths are useful for high density optical data storage and for visible flat panel displays. We propose to meet this need with InGaN. In(x)Ga(1-x)N is a direct, wide band gap semiconductor (2 to 3.5 ev). Its director band gap makes visible (blue) and UV emitters, and UV solar bling sensors possible. The material is extremely hard and capable of being used at high temperature. We propose to demonstrate the growth of InGaN on sapphire and ZnO with a low energy ion source to create energetic nitrogen radicals. The tasks will include modification of an existing MBE system for a nitrogen ion source and a high temperature growth heater.

Principal Investigator:

James Van Hove, Phd
6129345502

Business Contact:

Small Business Information at Submission:

Svt Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No