USA flag logo/image

An Official Website of the United States Government

MBE Sulfur Passivation of InP for High Power Millimeter Wave Electronics

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
36186
Program Year/Program:
1997 / SBIR
Agency Tracking Number:
36186
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SVT Associates
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1997
Title: MBE Sulfur Passivation of InP for High Power Millimeter Wave Electronics
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $99,959.00
 

Abstract:

High frequency power semiconductor devices based on metal insulator semiconductor field effect transistor (MISFET) structures have long been desired for microwave and millimeter wave (mm wave) applications. Unfortunately, complex interface defects and Fermi level pinning at the surface of both gallium arsenide (GaAs) and indium phosphide (InP) have impeded technology to control and stabilize MIS structures on these promising materials systems. SVT Associates proposes to develop under Phase I a method to form reproducible sulfur passivated MIS structures on InP with low interface state densities by molecular beam epitaxy (MBE) of CdS films. Under Phase II, processes and hardware for sulfur passivation of high power mm wave InP MISFETs will be designed and tested.

Principal Investigator:

Robert Hickman, Ii
6129342100

Business Contact:

Small Business Information at Submission:

Svt Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No