USA flag logo/image

An Official Website of the United States Government

High Temperature AlN Gate Dielectric Field Effect Transistors

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
36956
Program Year/Program:
1997 / SBIR
Agency Tracking Number:
36956
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SVT Associates
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1997
Title: High Temperature AlN Gate Dielectric Field Effect Transistors
Agency / Branch: DOD / NAVY
Contract: N/A
Award Amount: $69,992.00
 

Abstract:

A major innovation is needed to produce power devices which can operate at high temperatures (400 _C). Current Silicon power transistors have a maximum operating temperature typically below 150*C. High-temperature and high power electronics dictate a wide bandgap semiconductor such as SiC or GaN be used. SVT Associates proposes to use AlN deposited by molecular beam epitaxy (MBE) as an insulator for both SiC and GaN based metal insulator semiconductor field effect transistors (MISFETs). AlN is ideal for this application due to its high breakdown voltage and thermal stability. In the Phase I program, a RF plasma source will be used to provide activated nitrogen for the growth of insulating AlN films. These layers will be used to fabricate capacitors on both GaN and SiC substrates to characterize the properties of the AlN as a function of temperature. A MISFET based on a GaN HEMT structure will be fabricated using the AlN insulator and tested at elevated temperatures.

Principal Investigator:

Dr. James M. Van Hove
6129342100

Business Contact:

Small Business Information at Submission:

Svt Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No