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Indium Gallium Arsenide Nitride Quantum Dots for High Speed Infrared Emitters…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
58923
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
02-0840
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SVT Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2002
Title: Indium Gallium Arsenide Nitride Quantum Dots for High Speed Infrared Emitters BMDO02-011B
Agency / Branch: DOD / MDA
Contract: F49620-02-C-0078
Award Amount: $69,760.00
 

Abstract:

"The material Indium Gallium Arsenide Nitride (InGaAsN) is a novel compound semiconductor ideally suited for infrared optical devices. This material may be grown on GaAs substrates and can take advantage of mature GaAs processing technology. Quantum dots,a subset of the nanotechnology field, are structures whose physical dimensions are in the range of 10 nanometers, a size on the order of individual atoms themselves. Quantum physics theory predicts peculiarities in materials and devices which arefabricated at this exceedingly small scale, properties that can improve macro device performance. Quantum wells, with one dimension confined to the 10 nanometer range, are already utilized in commercial electronics components. Quantum dots are anadvancement of quantum wells in that structures are created with all three physical dimensions (length, width, depth) confined to the 10 nanometer order. Device improvements seen in quantum well devices are predicted to be even greater in quantum dotdevices once the quantum dot technology has matured. This Phase I study seeks to combine InGaAsN growth with quantum dots to create improved infrared light emitters. These GaAs-based devices have the potential of replacing InP/InGaAs-basedoptoelectronics for high speed optical data transmission. GaAs-based optoelectronic devices to replace InP/InGaAs technology. GaAs processing technology is more mature and less expensive than InP-based growth and p

Principal Investigator:

Aaron Moy
Senior Research Scientist
9529342100
moy@svta.com

Business Contact:

Jane Marks
Project Manager
9529342100
marks@svta.com
Small Business Information at Submission:

Svt Assoc., Inc.
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID: 411764876
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No