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High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
63589
Program Year/Program:
2004 / SBIR
Agency Tracking Number:
023732
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SVT Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2004
Title: High-Frequency, Low-Noise Nitride-Based Power Transistors Grown on Bulk III-N
Agency: NASA
Contract: NNC04CA13C
Award Amount: $599,997.00
 

Abstract:

Electronics circuits that can function in very high temperatures (> 450?C) are needed for a number of applications including automotive and turbine engine control, industrial high-temperature processing, geothermal and deep-well oil drilling, satellite power management systems, and future planetary missions to Venus and Mercury. The key electronic components for these applications include 1) an instrumentation amplifier to be used in conjunction with different probes and transducers, and 2) a power amplifier for driving motors and actuators. We propose to develop AlGaN-based electronics grown on low-defect substrates for operations at temperatures > 450?C and pressures > 100 atmospheres.

Principal Investigator:

Am Dabiran
Principal Investigator
9529342100
dabiran@svta.com

Business Contact:

Jane Marks
Business Manager
9529342100
marks@svta.com
Small Business Information at Submission:

SVT Associates
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID: 411764876
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No