High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications
Agency / Branch:
DOD / ARMY
A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Phase I program, device modeling, epitaxial growth, device processing and characterization will be done to fabricate a prototype AlGaN/GaN HFET operating in the impact ionization avalanche transit-time (IMPATT) mode.
Small Business Information at Submission:
MBE Laboratory Manager
Research Institution Information:
Svt Assoc., Inc.
7620 Executive Drive Eden Prairie, MN 55344
Number of Employees:
UNIV. OF ILLINOIS, URBANA-CHAM
127 Micro and Nanotechnology , 208 North Wright Street
Urbana, IL 61801
Nonprofit college or university