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High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
74156
Program Year/Program:
2006 / STTR
Agency Tracking Number:
A054-008-0227
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SVT Associates
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2006
Title: High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications
Agency / Branch: DOD / ARMY
Contract: W911NF-06-C-0190
Award Amount: $749,998.00
 

Abstract:

This STTR Phase II program is directed toward the development of a GaN-based hetrostructure filed effect transistor (HFET) for high-power mm-wave applications. The device makes use of a recently discovered impact ionization avalanche transit time (IMPATT)

Principal Investigator:

Amir Dabiran
MBE Laboratory Manager
9529342100
dabiran@svta.com

Business Contact:

Leslie Price
Contract Administrator
9529342100
price@svta.com
Small Business Information at Submission:

SVT ASSOC., INC.
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID: 411764876
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
UNIV. OF ILLINOIS, URBANA-CHAM
127 Micro and Nanotechnology
Urbana, IL 61801
Contact: Ilesanmi Adesida
Contact Phone: (217) 333-3097
RI Type: Nonprofit college or university