AlInGaN-based Transistors for Advanced Applications
Agency / Branch:
DOD / ARMY
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase I project, we will investigate indium containing AlInGaN HEMTs as part of the effort towards improving dc and rf performance. The work will involve novel device design, material growth, and wafer processing.
Small Business Information at Submission:
Manager of Device Development
SVT ASSOC., INC.
7620 Executive Drive Eden Prairie, MN 55344
Number of Employees: