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AlInGaN-based Transistors for Advanced Applications

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
73513
Program Year/Program:
2005 / SBIR
Agency Tracking Number:
A043-048-1290
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SVT Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2005
Title: AlInGaN-based Transistors for Advanced Applications
Agency / Branch: DOD / ARMY
Contract: W911QX-05-C-0073
Award Amount: $119,784.00
 

Abstract:

Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication, imaging and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase I project, we will investigate indium containing AlInGaN HEMTs as part of the effort towards improving dc and rf performance. The work will involve novel device design, material growth, and wafer processing.

Principal Investigator:

Andrei Osinsky
Manager of Device Development
9529342100
osinsky@svta.com

Business Contact:

Leslie Price
Contract Administrator
9529342100
price@svta.com
Small Business Information at Submission:

SVT ASSOC., INC.
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID: 411764876
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No