AlInGaN-based Transistors for Advanced Applications
Agency / Branch:
DOD / ARMY
Aluminum gallium nitride (AlGaN) based high electron mobility transistors (HEMTs) have been demonstrated with superior characteristics that make them promising candidates for high-performance radar, communication and other advanced applications. Still, there remain performance and reproducibility related issues that must be addressed to achieve successful commercialization of these devices. In this Phase II project, we will develop indium containing HEMTs for improved dc and rf performance. The work will involve novel device design, material growth, material and device characterization, and wafer processing.
Small Business Information at Submission:
Manager of Device Develop
SVT ASSOC., INC.
7620 Executive Drive Eden Prairie, MN 55344
Number of Employees: