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Cost Effective Manufacturing of Device Quality Large Diameter InSb

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
79190
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
F061-212-3643
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
SVT Associates, Inc.
7620 Executive Drive Eden Prairie, MN 55344-3677
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2006
Title: Cost Effective Manufacturing of Device Quality Large Diameter InSb
Agency / Branch: DOD / USAF
Contract: FA8718-06-C-0051
Award Amount: $99,741.00
 

Abstract:

SVT Associates proposes an innovative ion-beam, atomic Hydrogen and off-axis substrate techniques for device quality large diameter InSb for 3-5 um IR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular,optical detection and tracking of missiles. Ion-beam, Hydrogen atomic, and off-axis substrates have already been shown to improve other III-V growth, such as GaN, GaAs, and InAs. Applying the these techniques to the InSb grown on Si should result in lower dislocation density, higher material purity and smoother surface morphology, all important factors that should significantly enhance material quality and device operation. We intend to characterize the positive effects of these techniques in large area InSb in Phase I. In Phase II we will refine the process to realize larger diameter InSb and InSb-based discrete detectors and detector arrays.

Principal Investigator:

Peter Chow
General Manager
9529342100
chow@svta.com

Business Contact:

Leslie Price
Contract Administrator
9529342100
price@svta.com
Small Business Information at Submission:

SVT ASSOC., INC.
7620 Executive Drive Eden Prairie, MN 55344

EIN/Tax ID: 411764876
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No