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Cost Effective Manufacturing of Device Quality Large Diameter InSb

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA8718-06-C-0051
Agency Tracking Number: F061-212-3643
Amount: $99,741.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: AF06-212
Solicitation Number: 2006.1
Timeline
Solicitation Year: 2006
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-06-21
Award End Date (Contract End Date): 2007-07-29
Small Business Information
7620 Executive Drive
Eden Prairie, MN 55344
United States
DUNS: 876868647
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: Yes
Principal Investigator
 Peter Chow
 General Manager
 (952) 934-2100
 chow@svta.com
Business Contact
 Leslie Price
Title: Contract Administrator
Phone: (952) 934-2100
Email: price@svta.com
Research Institution
N/A
Abstract

SVT Associates proposes an innovative ion-beam, atomic Hydrogen and off-axis substrate techniques for device quality large diameter InSb for 3-5 um IR detector applications. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular,optical detection and tracking of missiles. Ion-beam, Hydrogen atomic, and off-axis substrates have already been shown to improve other III-V growth, such as GaN, GaAs, and InAs. Applying the these techniques to the InSb grown on Si should result in lower dislocation density, higher material purity and smoother surface morphology, all important factors that should significantly enhance material quality and device operation. We intend to characterize the positive effects of these techniques in large area InSb in Phase I. In Phase II we will refine the process to realize larger diameter InSb and InSb-based discrete detectors and detector arrays.

* Information listed above is at the time of submission. *

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