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Company Information:

Company Name: Symetrix Corp.
City: Colorado Springs
State: CO
Zip+4: 80918
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $248,072.00 5
SBIR Phase II $1,672,107.00 4

Award List:

DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Robert Venes
Award Amount: $49,459.00

RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / NAVY
Principal Investigator: Carlos Pas De Araujo
Award Amount: $49,459.00

RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

Award Year / Program / Phase: 1988 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Carlos Pas De Araujo
Award Amount: $449,000.00
Abstract:
Measurements of the hysteresis characteristics and switching kinetics will be made on three ferroelectric thin-film memory materials: lead germanate with 0 to 10% silicon (pb[5]ge[3-x]si[x]o[11]); bismoth titanate (bi[4]ti[3]o[12]); and potassium nitrate (kno[3]). emphasis will be placed in… More

DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

Award Year / Program / Phase: 1988 / SBIR / Phase II
Agency / Branch: DOD / NAVY
Principal Investigator: Robert Venes
Award Amount: $500,000.00
Abstract:
We have fabricated potassium nitrate ferroelectric memories in the form of 32 x 32 cell arrays on glass substrates (1kb) and measured their switching times and read write characteristics. the thinnest kno(3) films tested (75nm) yield 20 ns read-write times and high breakdown voltages (17v). minimum… More

RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: L D Mcmillan
Award Amount: $49,992.00

NEW MATERIALS AND IMPROVED ANNEALING PROCESSING AND CHARACTERIZATION FOR FERROELECTRIC-ON-GAAS MEMORIES

Award Year / Program / Phase: 1989 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Larry D Mcmillan
Award Amount: $50,000.00
Abstract:
If the new thin-film prototype ferroelectric memories are to be neccessfully integrated onto gaas circuitry, it will be necessary to develop rapid thermal processing techniques to protect the gaas junctions (a normal pzt anneal is 75 min at 650-750 deg c, which is intolerable for gaas devices). the… More

RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency / Branch: DOD / MDA
Principal Investigator: L D Mcmillan
Award Amount: $476,000.00
Abstract:
A systematic study of the sputtering technology and interface metallurgy for lead zirconate titante/platium/gallium-arsenide (pzt/pt/gaas) is being undertaken that is expected to permit large, rad-hard, nonvolitle ferroelectric random access memories (rams) to beconstructed. existing prototype pzt… More

THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

Award Year / Program / Phase: 1991 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: L Mcmillan , Principal Investigator
Award Amount: $49,162.00

THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

Award Year / Program / Phase: 1993 / SBIR / Phase II
Agency / Branch: DOD / DARPA
Principal Investigator: L Mcmillan , Principal Investigator
Award Amount: $247,107.00
Abstract:
We propose an extensive study of materials and deposition techniques suitable for fabrication of high-dielectric constant thin-film dram (dynamic random access memory) capacitors. these capacitors will minimize the need for trench processing in submicron, high density memories. our research firm has… More