Measurements of the hysteresis characteristics and switching kinetics will be made on three ferroelectric thin-film memory materials: lead germanate with 0 to 10% silicon (pb[5]ge[3-x]si[x]o[11]); bismoth titanate (bi[4]ti[3]o[12]); and potassium nitrate (kno[3]). emphasis will be placed in… More

We have fabricated potassium nitrate ferroelectric memories in the form of 32 x 32 cell arrays on glass substrates (1kb) and measured their switching times and read write characteristics. the thinnest kno(3) films tested (75nm) yield 20 ns read-write times and high breakdown voltages (17v). minimum… More

If the new thin-film prototype ferroelectric memories are to be neccessfully integrated onto gaas circuitry, it will be necessary to develop rapid thermal processing techniques to protect the gaas junctions (a normal pzt anneal is 75 min at 650-750 deg c, which is intolerable for gaas devices). the… More

A systematic study of the sputtering technology and interface metallurgy for lead zirconate titante/platium/gallium-arsenide (pzt/pt/gaas) is being undertaken that is expected to permit large, rad-hard, nonvolitle ferroelectric random access memories (rams) to beconstructed. existing prototype pzt… More

We propose an extensive study of materials and deposition techniques suitable for fabrication of high-dielectric constant thin-film dram (dynamic random access memory) capacitors. these capacitors will minimize the need for trench processing in submicron, high density memories. our research firm has… More