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Company Information:

Company Name:
Symetrix Corp.
Address:
5055 Mark Dabling Blvd Suite
100
Colorado Springs, CO 80918
Phone:
N/A
URL:
N/A
EIN:
N/A
DUNS:
N/A
Number of Employees:
N/A
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $248,072.00 5
SBIR Phase II $1,672,107.00 4

Award List:

DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,459.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Robert Venes
Abstract:
N/a

RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

Award Year / Program / Phase:
1987 / SBIR / Phase I
Award Amount:
$49,459.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Carlos Pas De Araujo
Abstract:
N/a

RESEARCH ON NONVOLATILE FERROELECTRIC RAMS

Award Year / Program / Phase:
1988 / SBIR / Phase II
Award Amount:
$449,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Carlos Pas De Araujo
Abstract:
Measurements of the hysteresis characteristics and switching kinetics will be made on three ferroelectric thin-film memory materials: lead germanate with 0 to 10% silicon (pb[5]ge[3-x]si[x]o[11]); bismoth titanate (bi[4]ti[3]o[12]); and potassium nitrate (kno[3]). emphasis will be placed in… More

DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

Award Year / Program / Phase:
1988 / SBIR / Phase II
Award Amount:
$500,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Robert Venes
Abstract:
We have fabricated potassium nitrate ferroelectric memories in the form of 32 x 32 cell arrays on glass substrates (1kb) and measured their switching times and read write characteristics. the thinnest kno(3) films tested (75nm) yield 20 ns read-write times and high breakdown voltages (17v). minimum… More

RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

Award Year / Program / Phase:
1988 / SBIR / Phase I
Award Amount:
$49,992.00
Agency / Branch:
DOD / MDA
Principal Investigator:
L D Mcmillan
Abstract:
N/a

NEW MATERIALS AND IMPROVED ANNEALING PROCESSING AND CHARACTERIZATION FOR FERROELECTRIC-ON-GAAS MEMORIES

Award Year / Program / Phase:
1989 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
Larry D Mcmillan
Abstract:
If the new thin-film prototype ferroelectric memories are to be neccessfully integrated onto gaas circuitry, it will be necessary to develop rapid thermal processing techniques to protect the gaas junctions (a normal pzt anneal is 75 min at 650-750 deg c, which is intolerable for gaas devices). the… More

RADIATION-HARD FERROELECTRIC-ON-GAAS RANDOM ACCESS MEMORIES FOR MISSILES AND/OR SPACECRAFT

Award Year / Program / Phase:
1990 / SBIR / Phase II
Award Amount:
$476,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
L D Mcmillan
Abstract:
A systematic study of the sputtering technology and interface metallurgy for lead zirconate titante/platium/gallium-arsenide (pzt/pt/gaas) is being undertaken that is expected to permit large, rad-hard, nonvolitle ferroelectric random access memories (rams) to beconstructed. existing prototype pzt… More

THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

Award Year / Program / Phase:
1991 / SBIR / Phase I
Award Amount:
$49,162.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
L Mcmillan , Principal Investigator
Abstract:
N/a

THIN-FILM, HIGH DIELECTRIC CONSTANT, MICRON-SIZED CAPACITOR MATERIALS

Award Year / Program / Phase:
1993 / SBIR / Phase II
Award Amount:
$247,107.00
Agency / Branch:
DOD / DARPA
Principal Investigator:
L Mcmillan , Principal Investigator
Abstract:
We propose an extensive study of materials and deposition techniques suitable for fabrication of high-dielectric constant thin-film dram (dynamic random access memory) capacitors. these capacitors will minimize the need for trench processing in submicron, high density memories. our research firm has… More