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DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
6510
Program Year/Program:
1988 / SBIR
Agency Tracking Number:
6510
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Symetrix Corp.
5055 Mark Dabling Blvd Suite 100 Colorado Springs, CO 80918
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1988
Title: DEVELOPMENT OF KNO(3) FERROELECTRIC MEMORIES
Agency / Branch: DOD / NAVY
Contract: N/A
Award Amount: $500,000.00
 

Abstract:

WE HAVE FABRICATED POTASSIUM NITRATE FERROELECTRIC MEMORIES IN THE FORM OF 32 X 32 CELL ARRAYS ON GLASS SUBSTRATES (1KB) AND MEASURED THEIR SWITCHING TIMES AND READ WRITE CHARACTERISTICS. THE THINNEST KNO(3) FILMS TESTED (75NM) YIELD 20 NS READ-WRITE TIMES AND HIGH BREAKDOWN VOLTAGES (17V). MINIMUM ADDRESS VOLTAGES OF 1.6V ARE ACHIEVED AT 150 NM THICKNESS. A THICKNESS WINDOW FROM 65 TO 800 NM IS COMPATIBLE WITH 4.5V STANDARD SILICON LOGIC LEVELS (TTL-CMOS). NEUTRON HARDNESS TO 5 X 10 TO THE 13TH POWER HAS BEEN MEASURED FORM SOME FILMS. WE WILL FABRICATE A NUMBER OF 1KB ARRAYS AND STUD THE PROCESSING PARAMETERS THAT INFLUENCE FATIGUE LIMITS. WE HAVE RECENTRLY DISCOVERED THAT A SINGLE 10V "RESTORE" PULSE RETURNS THE KNO(3) MEMORIES TO A STATE VERY NEAR THAT OF VIRGIN DEVICES. RELATED ELECTRICAL REMEDIES FOR FATIGUE/ENDURE PROBLEMS WILL BE ANALYZED UNDER THE PROPOSED WORK, TOGETHER WITH CHEMICAL APPROACHES INVOLVING DOPANTS.

Principal Investigator:

Robert Venes
3035944455

Business Contact:

Small Business Information at Submission:

Symetrix Corp.
215 E Sunbrid Cliffs Ln Colorado Springs, CO 80907

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No