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Use of Si3N4 as the Dielectric Gate Layer for Wide Bandgap Semiconductor Devices

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
36955
Program Year/Program:
1997 / SBIR
Agency Tracking Number:
36955
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Systems & Processes Engineering Corporat
6800 Burleson Road Building 320 Austin, TX -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1997
Title: Use of Si3N4 as the Dielectric Gate Layer for Wide Bandgap Semiconductor Devices
Agency / Branch: DOD / NAVY
Contract: N/A
Award Amount: $70,000.00
 

Abstract:

One of the most important problems to overcome for the development of wide bandgap metal insulator semiconductor (MIS) technology is development of high-quality gate dielectric layers. Systems & Processes Engineering Corporation (SPEC), in collaboration with the University of Texas at Austin, proposes to use deposited silicon nitride as the dielectric gate layer for wide bandgap semiconductor devices. During Phase I of the program, SPEC will deposit Si3N4 on SiC substrates and determine the electrical properties of the resultant dielectric layer such as the amount of charge the gate can control and compare the results to a standard silicon dioxide gate layer on SiC. Phase II of the program will optimize the dielectric deposition method, use this method to deposit the dielectric gate layer on SiC devices, and demonstrate improved performance of the device at temperatures over 400¿C using the new gate material.

Principal Investigator:

Dr. Keith Jamison
5123061100

Business Contact:

Small Business Information at Submission:

Systems & Processes
401 Camp Craft Rd Austin, TX 78746

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No