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Large Area Ultra-High Speed Metal-Semiconductor-Metal Photodetectors by Means of Epitaxial Liftoff and Grafting Technologies
Phone: (619) 438-1010
Novel interdigitated metal-semiconductor-metal structures offer new approaches for the development of broad area, high speed photodetectors. Inherent advantages include: lower capacitance than typical p-I-n structures, a wide dynamic range, and ease of fabrication. Our unique approach further reduces the packaging parasitics by separating the thin epitaxial membranes which contain the devices from their growth substrates, and grafting the thin films onto nonconducting substrates. As demonstrated already as TACAN Corporation, thin single-crystal semiconductor films containing metal photodetectors can be produced by epitaxial liftoff tecnology. After grafting to a different substrate, the films improve several features of photodetectors and the packaging process. Significant advantages of our unique approach are lower parasitics, improved thermal management, higher density packaging, applications to electronic mixed-signal and optoelectronic devices, lower manufacturing costs, applications to flexible of nonplanar packages and the development of new kinds of multichip modules. Epitaxial liftoff technology can be used to remove major parasitics impediments, thus increasing simultaneously device size and bandwidth, while maintaining a wide dynamic range. These epitaxial device films can then be used to create broader area photodetectors which can be used to improve system optical alignment and to increase the field of view in applications such as light detection and ranging systems.
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