Non-contact lithography based on optical superlensing at 193 nm
Agency / Branch:
DOD / DARPA
We are proposing the development of a "negative-index" material at 193 nm for use as a "superlens" for high resolution lithography. Superlensing has already been demonstrated at 365 nm, and this work will simply extend the demonstrated principles to 193 nm with a new set of materials.In Phase I, we will demonstrate this superlens with 30 nm half-pitch features, while restricting ourselves to a contact mask. In Phase II, we will extend the scheme to non-contact lithography based on superlensing at 193 nm.
Small Business Information at Submission:
TANNER RESEARCH, INC.
825 S. Myrtle Ave. Monrovia, CA 91016
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