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Company Information:

Company Name: Tezzaron Semiconductor Corp.
City: Naperville
State: IL
Zip+4: -
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phone: (630) 505-0404

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $398,952.00 4
SBIR Phase II $3,009,654.00 3

Award List:

Ultra-Dense Three-Dimensional Electronics for Space

Award Year / Program / Phase: 2008 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Robert Patti, CTO
Award Amount: $100,000.00
Abstract:
Tezzaron proposes the development of a 3D integrated memory on processor or host device. The proposed device is made from a very high-performance 3D integrated 512Mb DRAM memory device and a structured array with single layer customization. Both devices in the ultimate 3D integration have a high… More

3-D Space Qualifiable Field Programmable Gate Array

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Robert Patti, Systems Engineer
Award Amount: $100,000.00
Abstract:
Tezzaron proposes to use its 3D wafer stacking technology to produce a true 3 dimensional fabric of programmable logic. A benefit of 3D integration is the fundamental increase in interconnect. FPGAs by their nature use huge amounts of interconnect and in normal 2D implementations, they often have an… More

Ultra-Dense Three-Dimensional Electronics for Space

Award Year / Program / Phase: 2009 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Robert Patti, CTO
Award Amount: $1,579,930.00
Abstract:
Chip-to-chip I/O has become a serious bottleneck, especially in communications between high-speed processors and their memory devices. Integrating a large amount of memory and a powerful processor into a single 3D-IC device could alleviate this problem. Bringing the memory on-chip with a very wide… More

Design and Fabrication Techniques for 3-Dimensional Integrated Circuits

Award Year / Program / Phase: 2009 / SBIR / Phase I
Agency / Branch: DOD / DARPA
Principal Investigator: Robert Patti, CTO
Award Amount: $98,955.00
Abstract:
Tezzaron proposes to use and extend its 3D wafer stacking technology to produce a 8Gb DRAM. The device will be made from 8 layers of memory and a single logic control layer, providing density far beyond the capability of current commercial technology. A device of this density can offer significant… More

Ultra-Dense Three-Dimensional Electronics for Space

Award Year / Program / Phase: 2009 / SBIR / Phase II
Agency: DOD
Principal Investigator: Robert Patti, CTO
Award Amount: $679,805.00
Abstract:
Two radiation hardened 3D integrated circuit memory devices will be fabricated under this effort. The 3D devices are created by the wafer level 3D bonding of separate silicon substrates. Within each of the ~200 die in the resultant wafer stack, there some 5 million vertical interconnects. The very… More

Radiation-Hardened, Resistive Random Access Memory

Award Year / Program / Phase: 2011 / SBIR / Phase I
Agency: DOD
Principal Investigator: Robert Patti, CTO – (630) 505-0404
Award Amount: $99,997.00
Abstract:
ABSTRACT: Tezzaron intends to develop a nonvolatile low latency memory based on 3D assembly of RRAM memory cell wafers with CMOS logic wafers. The very high density 3D interconnect that Tezzaron can produce allows circuitry to be manufactured on different wafers in different semiconductor processes… More

Radiation-Hardened, Resistive Random Access Memory

Award Year / Program / Phase: 2012 / SBIR / Phase II
Agency: DOD
Principal Investigator: Robert Patti, CTO – (630) 505-0404
Award Amount: $749,919.00
Abstract:
ABSTRACT: Tezzaron proposes to develop and demonstrate a 64Mb 3D integrated MRAM device comprising one non-volatile memory cell layer and one radiation hardened I/O logic and control layer. This memory device will address the industry"s next generation needs for nonvolatile memory density and… More