Ultra-Dense Three-Dimensional Electronics for Space
Agency / Branch:
DOD / USAF
Tezzaron proposes the development of a 3D integrated memory on processor or host device. The proposed device is made from a very high-performance 3D integrated 512Mb DRAM memory device and a structured array with single layer customization. Both devices in the ultimate 3D integration have a high degree of radiation hardness and also have low power and an ultra-compact form factor.
Small Business Information at Submission:
TEZZARON SEMICONDUCTOR CORP.
1415 Bond St. #111 Naperville, IL 60563
Number of Employees: