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Epitaxially Grown, Germanium, Junction Field-Effect Transistor for Cryogenic…

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
22786
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
22786
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
TLC Precision Wafer Technology, Inc.
1411 West River Road, North Minneapolis, MN 55411-3436
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Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: Yes
 
Phase 1
Fiscal Year: 1994
Title: Epitaxially Grown, Germanium, Junction Field-Effect Transistor for Cryogenic Detectors
Agency: NASA
Contract: N/A
Award Amount: $70,000.00
 

Abstract:

An epitaxial grown Germanium - channel Junction Field Effect Transistor (Ge-JFET) is proposed to provide the most efficient, low noise cryogenically cooled detectors operating at 2 - 4¿K. Precisioned engineered lattice and doping epitaxial growth will eliminate material defects to allow the Germanium superior low temperature mobilities to be utilized in the most efficient cryogenic temperature transistors technology available (JFETs). The low resistance Al/Pd contacts on the engineered p-n-p structure will result in Ge-channel JFET detectors with very low noise at audio frequencies (lOHz), high input impedance and low power dissipation. TLC expect to demonstrate Ge-JFETs with less than l0nV of noise at lOOHz and 4¿K. This proposal summarizes how TLC will develop and demonstrate the material, fabrication and performance advantages of epitaxial grown Ge-JFETs for cryogenically cooled detector for

Principal Investigator:

Timothy T. Childs
6123412795

Business Contact:

Small Business Information at Submission:

Tlc Precision Wafer
661 5th Avenue North, Suite 160 Minneapolis, MN 55405

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No