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Low Cost 3" 1nP Based HEMTs for Advanced Millimeter Wave Monolithic Integrated…

Award Information

Agency:
Department of Defense 		Branch:
Defense Advanced Research Projects Agency 		Award ID:
26439 		Program Year/Program:
1994 / SBIR
Agency Tracking Number:
26439 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
TLC Precision Wafer Technology, Inc.
1411 West River Road, North Minneapolis, MN 55411-3436
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Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: Yes
 
Phase 1
Fiscal Year: 1994
Title: Low Cost 3" 1nP Based HEMTs for Advanced Millimeter Wave Monolithic Integrated Circuit Applications
Agency / Branch: DOD / DARPA
Contract: N/A
Award Amount: $100,000.00
 

Abstract:

To meet the future needs for increased capabilities in military as well as commercial space communications and radar applications, the W-Band (94 Ghz) frequency spectrum utilized. A critical issue has arisen in the development of the future W-band electronic systems technology: while InP-based materials and transistors are known to be the highest performance technology for W-band small signal and low-noise applications, they have not been able to be made commercially because InP material growth is at an embryonic stage of development and established sources of large diameter InP wafers are not yet available. Furthermore in power applications InP-based devices and circuits are limited by some key materials deficiencies. In particular, the "Kink effect", incomplete HFET pinch off at high drain voltages and low HFET breakdown. We plan to develop a technology for growing high IiiAs mole fraction InGaAs quantum well channel heterostructure field effect transistors (HFETS) with InAlAs barriers on 3" InP substrates for MMW devices and monolithic format integrated circuits. Structured layers- InGaAs channels, InAlAs barriers, will be grown lattice matched to or psuedomorphically on InP substrates, by engineering the lattice constant to that of InP (5.87A). Anticipated Benefits/Potential Applications - Using this approach, TLC Precision Wafer Technology will provide a steady source of material for the fabrication of MMIC's for the future W-band electronic systems on 3" InP substrates instead of 2" InP substrates.

Principal Investigator:

Timothy Childs
6123412795

Business Contact:

Small Business Information at Submission:

Tlc Precision Wafer
661 5th Avenue North #160 Minneapolis, MN 55405

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No