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Company Information:

Name: Top-Vu Technology Inc
Address: 2650 14th St NW
New Brighton, MN 55112
Located in HUBZone: No
Woman-Owned: No
Minority-Owned: Yes
URL: N/A
Phone: (612) 633-5925

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $577,380.00 9
SBIR Phase II $1,499,568.00 3

Award List:

GAAS ANALOG PREPROCESSING ELECTRONICS FOR INFRARED ASTRONOMICAL APPLICATIONS

Award Year / Program / Phase: 1989 / SBIR / Phase I
Agency: NASA
Principal Investigator: Ngoc-chi N Vu
Award Amount: $49,890.00

GAAS ANALOG PREPROCESSING ELECTRONICS FOR INFRARED ASTRONOMICAL APPLICATIONS

Award Year / Program / Phase: 1990 / SBIR / Phase II
Agency: NASA
Principal Investigator: Ngoc-chi N Vu
Award Amount: $499,997.00
Abstract:
Gallium arsenide analog preprocessing electronics (gape) areproposed for spaceborne infrared astronomical telescope projects. top-vu proposes an integrated analog electronic which uses gaas linear integrated circuits for detector readout and signal conditioning/processing. the gaas linear ics are to… More

GALLIUM ARSENIDE ANALOG PREPROCESSING ELECTRONICS FOR LINEAR Z-DIMENSION INFRARED-FOCAL PLANE ARRAY SENSORS

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency: NSF
Principal Investigator: Tho Vu , President
Award Amount: $49,984.00

GALLIUM ARSENIDE ANALOG PREPROCESSING ELECTRONICS FOR LINEAR Z-DIMENSION INFRARED-FOCAL PLANE ARRAY SENSORS

Award Year / Program / Phase: 1991 / SBIR / Phase II
Agency: NSF
Principal Investigator: Tho Vu , President
Award Amount: $250,000.00
Abstract:
This proposal describes an sbir project to research and develop gallium arsenide analog preprocessing electronics (gape) for infrared focal plane array (ir-fpa) sensors. top-vu technology proposes an integrated analog preprocessorwhich uses gaas linear integrated circuits for high-performance… More

GaAs VLSI Readout Electronics for Infrared Focal Plane Arrays

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chi Nguyen
Award Amount: $50,000.00
Abstract:
GALLIUM ARSENIDE (GaAs) TECHNOLOGY ADVANCES HAVE SHOWN THE CAPABILITY FOR PRODUCING VERY LARGE SCALE INTEGRATED (VLSI) CIRCUITS FOR DIGITAL COMPUTING APPLICATIONS. THE INTENT OF THIS PROJECT IS EXTEND THE GaAs VLSI TECHNOLOGY TO ANALOG READOUT ELECTRONICS FOR THE SDI INFRARED FOCAL PLANE ARRAYS… More

Parallel and Pipeline Architecture for Guidance and Navigation GaAs Signal Processors

Award Year / Program / Phase: 1993 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Tho T. Vu
Award Amount: $50,000.00

GaAs BASED ACCELEROMETERS FOR INTEGRATED GUIDANCE AND NAVIGATION SUBSYSTEMS

Award Year / Program / Phase: 1994 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Tho T. Vu
Award Amount: $80,000.00

GaAs BASED ACCELEROMETERS FOR INTEGRATED GUIDANCE AND NAVIGATION SUBSYSTEMS

Award Year / Program / Phase: 1995 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Tho T. Vu
Award Amount: $749,571.00
Abstract:
Top-Vu's unique approach is to integrate micro-inertial elements and electronics on a gallium arsenide (GaAs) substrate. The advantages are high precision guidance and navigation, virtually no uncorrelated output errors, high reliability in accelerated environment, excellent electrical isolation… More

GaAs-Based Infrared Microsensors

Award Year / Program / Phase: 1995 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Tho T. Vu
Award Amount: $62,506.00
Abstract:
The objective of Phase I is to develop monolithic GaAs-based infrared detector arrays with GaAs readout electronics. The project includes three major technical tasks: 1) detector design, 2) process integration, and 3) readout electronics. The primary application of this project is for BMDO infrared… More

CHFET Readout Integrated Circuits

Award Year / Program / Phase: 1997 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Tho T. Vu
Award Amount: $100,000.00
Abstract:
Next generation of infrared focal plane arrays for the Air Force space electronics must be large-format, high data rates, low power dissipation, and high radiation resistance. Gallium arsenide (GaAs) technology advances have shown the capability for producing very large scale integrated (VLSI)… More

High Performance Readout Electronics For BMDO Infrared Sensors

Award Year / Program / Phase: 1998 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Chi H. Nguyen
Award Amount: $65,000.00
Abstract:
This proposal responds to the solicitation BMDO 98-008 on Survivability Technology where it states that a key ballistic defense area is sensor subsystems, the components of which (focal plane arrays, readout electronics, and preprocessing) must survive the laser, nuclear, IR, and natural… More

High performance Micromachined Inertial Navigation Unit

Award Year / Program / Phase: 1999 / SBIR / Phase I
Agency: NASA
Principal Investigator: Tho T. Vu, President
Award Amount: $70,000.00