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RADIATION REPONSE OF EPI-LESS BOND ETCH SILICON-ON-INSULATOR FABRICATED WITH…

Award Information

Agency:
Department of Defense 		Branch:
Missile Defense Agency 		Award ID:
15723 		Program Year/Program:
1992 / SBIR
Agency Tracking Number:
15723 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
UES, Inc.
4401 Dayton-Xenia Road Dayton, OH -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1992
Title: RADIATION REPONSE OF EPI-LESS BOND ETCH SILICON-ON-INSULATOR FABRICATED WITH MEV ION IMPLANTATION
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $250,000.00
 

Abstract:

EPI-LESS BOND ETCH SILICON-ON-INSULATOR (EL-BESOI) USING MEV ION IMPLANTATION IS A NEW APPROACH TO FABRICATING HIGH QUALITY SOI PARTICULARLY FOR VERY THIN SOI (100-300 NM) AS REQUIRED FOR USE IN HIGH SPEED, FULLY DEPLETED, CMOS DEVICE STRUCTURES. AND THE RADIATION RESPONSE OF SUCH SOI MATERIAL IS A CONTINUING CONCERN FOR RADIATION ENVIRONMENTS SUCH AS SPACE, REACTORS, OR NUCLEAR BURSTS. BONDED SOI MATERIAL IS UNIQUE IN THAT THE OXIDE CAN BE CUSTOM DESIGNED OR MODIFIED DURING FABRICATION FOR A DEGREE OF CONTROL OF RADIATION HARDNESS PROPERTIES. THIS PROGRAM WILL STUDY SUCH OXIDE FABRICATION TECHNIQUES AND EVALUATE THEM FOR RADIATION RESPONSE UNDER INTENSE X-RAY, ELECTRON, AND PROTON BOMBARDMENT. ADDITIONALLY, OPTIMIZATION OF THE MEV EL-BESOI MANUFACTURING PROCESS WILL ALSO BE PURSUED FOR 3" AND 4" WAFERS.

Principal Investigator:

Perter P Pronko
Principal Investigator
5134266900

Business Contact:

Small Business Information at Submission:

Universal Energy Systems Inc.
4401 Dayton-xenia Road Dayton, OH 45432

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No