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SiC Dielectric Capacitor

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
19614
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
19614
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
UES, Inc.
4401 Dayton-Xenia Road Dayton, OH -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: SiC Dielectric Capacitor
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $75,292.00
 

Abstract:

THE PROPOSED RESEARCH ATTEMPTS TO DEVELOP AN ADVANCED CAPACITOR USING SiC FOR HIGH TEMPERATURE (400 0C), HIGH POWER, AND HIGH DENSITY ELECTRONIC COMPONENTS FOR AIRCRAFT OR AEROSPACE APPLICATION. THE CONVENTIONAL CAPACITOR CONSISTS OF A LARGE NUMBER OF METALLIZED POLYSULFONE FILM CAPACITORS IN PARALLEL ENCLOSED IN A HERMETICALLY SEALED METAL CASE. PROBLEMS WITH ELECTRICAL FAILURE THERMAL FAILURE AND DIELECTRICAL FLOWS WERE EXPERIENCED BY AIR FORCE SUPPLIERS OF THE COMPONENT AND SUBSYSTEM. THE HIGH BREAKDOWN ELECTRICAL FIELD, HIGH THERMAL CONDUCTIVITY, AND HIGH TEMPERATURE OPERATIONAL RESISTANCE OF SiC COMPARED TO THE CONVENTIONAL POLYMER AND CERAMIC CAPACITOR WOULD MAKE IT A BETTER CHOICE FOR THE HIGH TEMPERATURE, HIGH POWER CAPACITOR. THE PROTOTYPICAL CAPACITOR WILL BE FABRICATED USING SiC. THE QUALITY OF THE DIELECTRICAL FILM WILL BE EVALUATED. THE ELECTRICAL PARAMETERS, SUCH AS THE CAPACITANCE DISSIPATION FACTOR EQUIVALENT SERIES RESISTANCE, AND DIELECTRIC WITHSTAND VOLTAGE WILL BE EVALUATED. POSSIBLE FAILURE MECHANISM WILL ALSO BE INVESTIGATED AND SUITABLE REMEDIES EVALUATED.

Principal Investigator:

Bang-hung Tsao
5132533986

Business Contact:

Small Business Information at Submission:

Ues, Inc.
4401 Dayton-xenia Road Dayton, OH 45432

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No