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Development of an Implant Isolation Process for Heterojunction Bipolar…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
32303
Program Year/Program:
1997 / SBIR
Agency Tracking Number:
32303
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
UES, Inc.
4401 Dayton-Xenia Road Dayton, OH 45432-1894
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Woman-Owned: Yes
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1997
Title: Development of an Implant Isolation Process for Heterojunction Bipolar Transistors
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $749,884.00
 

Abstract:

Heterojunction bipolar transistors (HBT) are attracting much interest in high speed device applications, especially where high efficiency and high power density operation are of interest. A key issue for the manufacturability of HBTs is electrical isolation of individual devices from each other. The major problem with HBT isolation is the thickness of the power device structure where it is desirable to have collector and sub-collector layers 1 um thick or more. Such thick structures create problems for conventional mesa and keV implant isolation schemes. UES proposes to develop implant isolation schemes involving multiple does MeV B+ and O+ implants. The formation of high resistivity regions in GaAs-AlGaAs HBT structures will be investigated for different implant schemes formulated on the basis of computer simulations. The leakage current, breakdown voltage and sheet resistance measurements will be performed to optimize the implant parameters such as energy and dose.

Principal Investigator:

Dr. Rabi Bhattacharya
5134266900

Business Contact:

Small Business Information at Submission:

Ues, Inc.
4401 Dayton-Xenia Rd. Dayton, OH 45432

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No