Design and Fabrication of An Advanced SiC SIT for High Power Transmitter
Agency / Branch:
DOD / USAF
In response to Air Force SBIR Topic No. AF01-222, we propose to designand fabricate advanced SiC SITs based on advanced SiC process technology.The advanced design is expected to lead to (i) substantially reducedcomplexity in the process and fabrication of SiC SITs, both in criticalalignment requirements and in gating structure formation; and (ii) greatlyimproved signal output stability, efficiency, power density, and hightemperature capability. In Phase I, we propose to design, optimize, andcompare three different SiC SIT structures including an inverted mode SIT.DC and high frequency characteristics will be systematically studied bothat room temperature and 300C. Concentration will be focused on normally-off operation with highest possible power density, efficiency, and bandwidthover a wide temperature range. We also propose to perform experimental workto develop all of the critical process technologies in Phase I. In Phase II,we shall apply the developed technology to fabricate the advanced 4H-SiC SITsand use them to demonstrate the operation of a prototype pulsed transmittercapable of stable output signals at temperatures up to 300 C range.High performance SiC SITs for high frequency, high power and hightemperature applications including airborne and space pulsed powertransmitters and wireless communication base stations and satellitelinks.
Small Business Information at Submission:
UNITED SILICON CARBIDE, INC.
New Brunswick Technol. Center, 100 Jersey Ave. Bui New Brunswick, NJ 08901
Number of Employees: