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Design and Fabrication of an Advanced SiC SIT for High Power Transmitter

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
52504
Program Year/Program:
2002 / SBIR
Agency Tracking Number:
011SN-0685
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
United Silicon Carbide, Inc
7 Deer Park Drive, Suite E Monmouth Junction, NJ -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2002
Title: Design and Fabrication of an Advanced SiC SIT for High Power Transmitter
Agency / Branch: DOD / USAF
Contract: F33615-02-C-1158
Award Amount: $750,000.00
 

Abstract:

We propose to fully develop the innovative static induction transistor based on our successful feasibility demonstration performed in Phase I. The innovative process technology and the novel SIT design will make it possible (i) to achieve normally-off RFSITs, (ii) to substantially improve RF SIT's output power stability, (iii) to drastically increase the single chip SIT power density and power output, and (iv) to allow the SIT to operate at much higher temperatures with minimum concerns on thermallimitations. In Phase II, we propose to carry out the major research and development of the novel normally-off SITs, with efforts focused on experimental fabrications, packaging and characterization. A systematic study is planned to fully develop the novelSIT in terms of its power density, output signal stability, frequency performance, and temperature capability. Computer modeling will also be performed to further guiding the structure optimization. Processing technology will be further developed andoptimized. Our target is to have prototype normally-off SITs capable of high power and high temperature operations in the highly desired normally-off mode by the end of Phase II. In the privately funded Phase III, we plan to conduct commercializationdevelopment and have limited amount of high power RF SITs commercially available by the end of the first year of Phase III effort for prototype system demonstration.

Principal Investigator:

Maurice Weiner
Vice President
7325659500
uscweiner@yahoo.com

Business Contact:

Maurice Weiner
Vice President
7325659500
uscweiner@yahoo.com
Small Business Information at Submission:

United Silicon Carbide, Inc.
New Brunswick Technology Cente, 100 Jersey Ave. Bu New Brunswick, NJ 08901

EIN/Tax ID: 223527296
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No