USA flag logo/image

An Official Website of the United States Government

Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
71984
Program Year/Program:
2005 / SBIR
Agency Tracking Number:
033612
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
United Silicon Carbide, Inc
7 Deer Park Drive, Suite E Monmouth Junction, NJ 08852-1921
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2005
Title: Uncooled Radiation Hard Large Area SiC X-ray and EUV Detectors and 2D Arrays
Agency: NASA
Contract: NNG05CA19C
Award Amount: $600,000.00
 

Abstract:

This project seeks to design, fabricate, characterize and commercialize large area, uncooled and radiative hard 4H-SiC EUV ? soft X-ray detectors capable of ultra low noise photon counting. The detector design and advanced processing technologies combined with the unique material property of 4H-SiC are expected to lead to orders of magnitude improvements to the performance of large area solid state detectors including much lower noise due to the wide bandgap and substantially improved lifetime due to the greatly increased radiation tolerance in comparison to state-of-the-art solid state EUV-soft X-ray detector technologies. In Phase II, detectors and 2D arrays will be designed and fabricated. Eight batches will be fabricated with different detector sizes and different active abs thicknesses. Concentration will be focused on achieving very low dark current and high quantum efficiency based on a novel design. The fabricated detectors and 2D arrays with different optical window sizes will be characterized, including dark current, forward current ideality factor, quantum efficiency. The dominant source and mechanism of the dark current will be investigated to help identify approaches to further reduce the dark current in the privately funded Phase III which will be concentrating on pushing up the yield over 3" wafer for commercialization within one year after the completion of Phase II.

Principal Investigator:

Leonid Fursin
7325659500
unitedsic@unitedsic.com

Business Contact:

George Lin
Business Official
7325659500
uscglin@unitedsic.com
Small Business Information at Submission:

United Silicon Carbide, Inc.
New Brunswick Technology Center 100 Jersey Ave. Building A New Brunswick, NJ 08901

EIN/Tax ID: 223527296
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No